CSD16327Q3T
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Texas Instruments CSD16327Q3T

Manufacturer No:
CSD16327Q3T
Manufacturer:
Texas Instruments
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 25V 60A 8VSON
Delivery:
Payment:
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Product Introduction

Overview

The CSD16327Q3T is a 25-V, N-channel NexFET™ power MOSFET from Texas Instruments. This device is designed to minimize losses in power conversion and is optimized for 5-V gate drive applications. It features a low on-resistance of 3.4 mΩ and is packaged in a compact SON 3.3-mm × 3.3-mm plastic package. The MOSFET is avalanche rated, has ultra-low gate charge (Qg and Qgd), and exhibits low thermal resistance, making it suitable for a variety of high-performance applications.

Key Specifications

ParameterTypical ValueUnit
Drain-to-Source Voltage (VDS)25V
Gate-to-Source Voltage (VGS)+10 / –8V
Continuous Drain Current (ID)60A
Pulsed Drain Current (IDM)240A
Power Dissipation (PD)2.8W
Operating Junction Temperature (TJ)–55 to 150°C
Gate Charge Total (Qg)6.2nC
Gate Charge Gate-to-Drain (Qgd)1.1nC
Drain-to-Source On-Resistance (RDS(on)) at VGS = 4.5 V4
Gate-to-Source Threshold Voltage (VGS(th))1.2V

Key Features

  • Optimized for 5-V gate drive
  • Ultra-low Qg and Qgd
  • Low thermal resistance
  • Avalanche rated
  • Lead-free terminal plating
  • RoHS compliant and halogen free
  • Compact SON 3.3-mm × 3.3-mm plastic package

Applications

  • Point-of-load synchronous buck converters for networking, telecom, and computing systems
  • Control or synchronous FET applications

Q & A

  1. What is the maximum drain-to-source voltage of the CSD16327Q3T?
    The maximum drain-to-source voltage is 25 V.
  2. What is the typical on-resistance of the CSD16327Q3T at VGS = 4.5 V?
    The typical on-resistance is 4 mΩ.
  3. What are the key features of the CSD16327Q3T?
    The key features include optimization for 5-V gate drive, ultra-low Qg and Qgd, low thermal resistance, avalanche rating, lead-free terminal plating, RoHS compliance, and halogen-free packaging.
  4. What is the maximum continuous drain current of the CSD16327Q3T?
    The maximum continuous drain current is 60 A.
  5. What is the operating junction temperature range of the CSD16327Q3T?
    The operating junction temperature range is –55 to 150 °C.
  6. What type of package does the CSD16327Q3T come in?
    The device is packaged in a SON 3.3-mm × 3.3-mm plastic package.
  7. Is the CSD16327Q3T RoHS compliant?
    Yes, the CSD16327Q3T is RoHS compliant and halogen free.
  8. What are some common applications of the CSD16327Q3T?
    Common applications include point-of-load synchronous buck converters for networking, telecom, and computing systems, as well as control or synchronous FET applications.
  9. What is the gate charge total (Qg) of the CSD16327Q3T?
    The gate charge total (Qg) is 6.2 nC.
  10. What is the maximum power dissipation of the CSD16327Q3T?
    The maximum power dissipation is 2.8 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):3V, 8V
Rds On (Max) @ Id, Vgs:4mOhm @ 24A, 8V
Vgs(th) (Max) @ Id:1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4 nC @ 4.5 V
Vgs (Max):+10V, -8V
Input Capacitance (Ciss) (Max) @ Vds:1300 pF @ 12.5 V
FET Feature:- 
Power Dissipation (Max):74W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-VSON-CLIP (3.3x3.3)
Package / Case:8-PowerTDFN
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Similar Products

Part Number CSD16327Q3T CSD16327Q3
Manufacturer Texas Instruments Texas Instruments
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V 25 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc) 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3V, 8V 3V, 8V
Rds On (Max) @ Id, Vgs 4mOhm @ 24A, 8V 4mOhm @ 24A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 4.5 V 8.4 nC @ 4.5 V
Vgs (Max) +10V, -8V +10V, -8V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 12.5 V 1300 pF @ 12.5 V
FET Feature - -
Power Dissipation (Max) 74W (Tc) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-VSON-CLIP (3.3x3.3) 8-VSON-CLIP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerTDFN

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