MUR460S R6
  • Share:

Taiwan Semiconductor Corporation MUR460S R6

Manufacturer No:
MUR460S R6
Manufacturer:
Taiwan Semiconductor Corporation
Package:
Tape & Reel (TR)
Description:
DIODE GENERAL PURPOSE DO214AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUR460S R6, produced by Taiwan Semiconductor Corporation, is a high-performance ultrafast recovery rectifier diode. This component is designed to meet the demands of various high-frequency and high-power applications. With its robust specifications and reliable performance, it is an ideal choice for engineers and designers seeking efficient and durable rectification solutions.

Key Specifications

Parameter Value Unit
Repetitive Reverse Voltage (Vrrm Max) 600 V
Forward Current (If(AV)) 4 A
Diode Configuration Single
Forward Voltage (VF Max) 1.35 V
Reverse Recovery Time (trr Max) 60 ns
Forward Surge Current (Ifsm Max) 150 A
Operating Temperature Max 150 °C
Diode Case Style DO-201AA
No. of Pins 2 Pins
Packaging Each
Junction Temperature (Tj Max) 150 °C
Junction Temperature (Tj Min) -65 °C
Junction to Case Thermal Resistance 28 °C/W
Termination Type Axial Leaded

Key Features

  • Ultrafast Recovery Time: The MUR460S R6 features a reverse recovery time of 50 ns, making it suitable for high-frequency applications.
  • High Forward Current: With a forward current rating of 4 A, this diode can handle significant current loads.
  • High Voltage Rating: The diode has a repetitive reverse voltage rating of 600 V, ensuring reliability in high-voltage circuits.
  • Low Forward Voltage Drop: The maximum forward voltage is 1.35 V, minimizing power losses during operation.
  • Wide Operating Temperature Range: The diode operates within a temperature range of -65°C to 150°C, making it versatile for various environmental conditions.
  • Axial Leaded Package: The DO-201AA package is easy to handle and integrate into through-hole applications.

Applications

  • Power Supplies: Suitable for use in switching power supplies, DC-DC converters, and AC-DC converters due to its fast recovery time and high voltage rating.
  • Motor Control: Used in motor control circuits where high current and voltage handling are required.
  • High-Frequency Circuits: Ideal for applications involving high-frequency switching due to its ultrafast recovery characteristics.
  • Automotive Systems: Can be used in automotive systems that require robust and reliable rectification components.
  • Industrial Electronics: Suitable for various industrial electronic applications where high reliability and performance are critical.

Q & A

  1. What is the maximum repetitive reverse voltage of the MUR460S R6 diode?

    The maximum repetitive reverse voltage (Vrrm) is 600 V.

  2. What is the forward current rating of the MUR460S R6?

    The forward current rating (If(AV)) is 4 A.

  3. What is the typical reverse recovery time of the MUR460S R6?

    The typical reverse recovery time (trr) is 50 ns.

  4. What is the maximum forward surge current of the MUR460S R6?

    The maximum forward surge current (Ifsm) is 150 A.

  5. What is the operating temperature range of the MUR460S R6?

    The operating temperature range is -65°C to 150°C.

  6. What type of package does the MUR460S R6 come in?

    The MUR460S R6 comes in a DO-201AA axial leaded package.

  7. What is the junction to case thermal resistance of the MUR460S R6?

    The junction to case thermal resistance is 28 °C/W.

  8. Is the MUR460S R6 suitable for high-frequency applications?

    Yes, it is suitable due to its ultrafast recovery time.

  9. Can the MUR460S R6 be used in automotive systems?

    Yes, it can be used in automotive systems due to its robust specifications and reliability.

  10. What is the maximum forward voltage drop of the MUR460S R6?

    The maximum forward voltage drop (VF Max) is 1.35 V.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):4A
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:10 µA @ 600 V
Capacitance @ Vr, F:65pF @ 4V, 1MHz
Mounting Type:Surface Mount
Package / Case:DO-214AB, SMC
Supplier Device Package:DO-214AB (SMC)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
567

Please send RFQ , we will respond immediately.

Same Series
DD15S20LV5X
DD15S20LV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200T0/AA
DD62M3200T0/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD44M32S0V3S/AA
DD44M32S0V3S/AA
CONN D-SUB HD PLUG 44P VERT SLDR
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20WTS
DD15S20WTS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S2000X
DD26S2000X
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JV5S/AA
DD15S20JV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0T20
DD26S2S0T20
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BAT46W-HE3-08
BAT46W-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 150MA SOD123
PMEG4020EPASX
PMEG4020EPASX
Nexperia USA Inc.
DIODE SCHOTTKY 40V 2A DFN2020D-3
STPSC4H065D
STPSC4H065D
STMicroelectronics
DIODE SCHOTTKY 650V 4A TO220AC
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
MUR1520G
MUR1520G
onsemi
DIODE GEN PURP 200V 15A TO220-2
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
NRVBS260NT3G
NRVBS260NT3G
onsemi
DIODE SCHOTTKY 2A 60V 1202 SMB2
1N4007G L
1N4007G L
MDD
GENERAL DIODE 1KV 1A DO-41
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N5821 B0G
1N5821 B0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BAT54T REG
BAT54T REG
Taiwan Semiconductor Corporation
DIODE ARRAY SCHOTTKY 30V SOT363
1N4148WS RRG
1N4148WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 75V 150MA SOD323F
BAV21WS RRG
BAV21WS RRG
Taiwan Semiconductor Corporation
DIODE GEN PURP 250V 200MA SOD323
MUR460S R7G
MUR460S R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO214AB
MUR460S R7
MUR460S R7
Taiwan Semiconductor Corporation
DIODE GENERAL PURPOSE DO214AB
BZX84C18 RFG
BZX84C18 RFG
Taiwan Semiconductor Corporation
DIODE ZENER 18V 300MW SOT23
BC846B RFG
BC846B RFG
Taiwan Semiconductor Corporation
TRANS NPN 65V 0.1A SOT23
MMBT3904L RFG
MMBT3904L RFG
Taiwan Semiconductor Corporation
TRANS NPN 40V 0.2A SOT23
BC857A RFG
BC857A RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.1A SOT23
BC817-16W RFG
BC817-16W RFG
Taiwan Semiconductor Corporation
TRANS NPN 45V 0.5A SOT323
BC807-40W RFG
BC807-40W RFG
Taiwan Semiconductor Corporation
TRANS PNP 45V 0.5A SOT323
BSS123W
BSS123W
Taiwan Semiconductor Corporation
100V, 0.16A, SINGLE N-CHANNEL PO