Overview
The STP85NF55L is a high-performance N-channel Power MOSFET developed by STMicroelectronics. It is part of the STripFET™ II series, known for its advanced 'single feature size' strip-based process. This technology enhances the transistor's packing density, resulting in low on-resistance, rugged avalanche characteristics, and improved manufacturing reproducibility. The STP85NF55L is available in the TO-220 package and is designed for high-current switching applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 55 | V |
| Gate-Source Voltage (VGS) | ±15 | V |
| Continuous Drain Current (ID) at TC = 25 °C | 80 | A |
| Pulsed Drain Current (IDM) | 320 | A |
| Static Drain-Source On Resistance (RDS(on)) at VGS = 10 V, ID = 40 A | 0.0060 - 0.008 | Ω |
| Gate Threshold Voltage (VGS(th)) | 1 - 2.5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-Ambient (Rthj-amb) | 62.5 | °C/W |
Key Features
- Low threshold drive for easy gate control.
- High packing density for low on-resistance.
- Rugged avalanche characteristics for enhanced reliability.
- Less critical alignment steps for improved manufacturing reproducibility.
- High current handling capability with a continuous drain current of up to 80 A.
- Low static drain-source on resistance (RDS(on)) of 0.0060 - 0.008 Ω at VGS = 10 V and ID = 40 A.
Applications
The STP85NF55L is designed for high-current switching applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
- Automotive and industrial power management systems.
Q & A
- What is the maximum drain-source voltage (VDS) of the STP85NF55L?
The maximum drain-source voltage (VDS) is 55 V. - What is the continuous drain current (ID) rating of the STP85NF55L at 25 °C?
The continuous drain current (ID) rating is 80 A at 25 °C. - What is the typical static drain-source on resistance (RDS(on)) of the STP85NF55L?
The typical static drain-source on resistance (RDS(on)) is 0.0060 - 0.008 Ω at VGS = 10 V and ID = 40 A. - What is the gate threshold voltage (VGS(th)) range of the STP85NF55L?
The gate threshold voltage (VGS(th)) range is 1 - 2.5 V. - What are the thermal resistance values for the STP85NF55L?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W. - What is the maximum pulse drain current (IDM) of the STP85NF55L?
The maximum pulse drain current (IDM) is 320 A. - What is the typical forward transconductance (gfs) of the STP85NF55L?
The typical forward transconductance (gfs) is 130 S. - What are the package options available for the STP85NF55L?
The STP85NF55L is available in the TO-220 package. - What are some common applications of the STP85NF55L?
Common applications include power supplies, DC-DC converters, motor control systems, high-frequency switching circuits, and automotive and industrial power management systems. - What is the storage temperature range for the STP85NF55L?
The storage temperature range is -55 to 175 °C.
