STP6N65M2
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STMicroelectronics STP6N65M2

Manufacturer No:
STP6N65M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 650V 4A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP6N65M2 is a high-performance N-channel power MOSFET produced by STMicroelectronics. This device is part of the MDmesh™ M2 series, known for its low gate charge and high efficiency. Although the STP6N65M2 is currently obsolete and no longer manufactured, it remains relevant for existing designs and maintenance of older systems. The MOSFET is available in TO-220FP, TO-220, and IPAK packages, offering versatility in design and application.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)650 V
RDS(on) (Drain-Source On-Resistance)1.2 Ω (typical)
ID (Continuous Drain Current)4 A
Gate Charge (Qg)Extremely low
Package TypesTO-220FP, TO-220, IPAK

Key Features

  • Extremely low gate charge, enhancing switching performance and efficiency.
  • High drain-source voltage (VDS) of 650 V, suitable for high-voltage applications.
  • Low drain-source on-resistance (RDS(on)) of 1.2 Ω (typical), reducing power losses.
  • 100% avalanche tested, ensuring robustness and reliability.
  • Zener-protected gate for enhanced protection against voltage spikes.

Applications

The STP6N65M2 is ideal for various high-power applications, including:

  • Flyback converters due to its high voltage and low on-resistance.
  • LED lighting systems where high efficiency and reliability are crucial.
  • Power supplies and DC-DC converters requiring high performance and robustness.

Q & A

  1. What is the maximum drain-source voltage of the STP6N65M2?
    The maximum drain-source voltage (VDS) is 650 V.
  2. What is the typical drain-source on-resistance of the STP6N65M2?
    The typical drain-source on-resistance (RDS(on)) is 1.2 Ω.
  3. What are the available package types for the STP6N65M2?
    The STP6N65M2 is available in TO-220FP, TO-220, and IPAK packages.
  4. Is the STP6N65M2 still in production?
    No, the STP6N65M2 is currently obsolete and no longer manufactured.
  5. What are some recommended substitutes for the STP6N65M2?
    One recommended substitute is the AOT8N80L from Alpha & Omega Semiconductor Inc.
  6. What are the key features of the STP6N65M2?
    The key features include extremely low gate charge, high drain-source voltage, low drain-source on-resistance, and Zener-protected gate.
  7. What applications is the STP6N65M2 suitable for?
    The STP6N65M2 is suitable for flyback converters, LED lighting systems, and power supplies.
  8. Why is the STP6N65M2 100% avalanche tested?
    The STP6N65M2 is 100% avalanche tested to ensure robustness and reliability in high-stress applications.
  9. Where can I find detailed specifications for the STP6N65M2?
    Detailed specifications can be found in the datasheet available on official STMicroelectronics websites and distributors like Digi-Key and Mouser.
  10. What is the continuous drain current rating of the STP6N65M2?
    The continuous drain current (ID) rating is 4 A.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.35Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9.8 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:226 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):60W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Same Series
STU6N65M2
STU6N65M2
MOSFET N-CH 650V 4A IPAK
STF6N65M2
STF6N65M2
MOSFET N-CH 650V 4A TO220FP

Similar Products

Part Number STP6N65M2 STP9N65M2 STP7N65M2 STP6N60M2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V 650 V 600 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc) 5A (Tc) 5A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 1.35Ohm @ 2A, 10V 900mOhm @ 2.5A, 10V 1.15Ohm @ 2.5A, 10V 1.2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.8 nC @ 10 V 10 nC @ 10 V 9 nC @ 10 V 8 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 226 pF @ 100 V 315 pF @ 100 V 270 pF @ 100 V 232 pF @ 100 V
FET Feature - - - -
Power Dissipation (Max) 60W (Tc) 60W (Tc) 60W (Tc) 60W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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