STL8DN10LF3
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STMicroelectronics STL8DN10LF3

Manufacturer No:
STL8DN10LF3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 100V 20A 5X6
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STL8DN10LF3 is an automotive-grade dual N-channel Power MOSFET developed by STMicroelectronics using their advanced STripFET™ F3 technology. This device is designed to minimize on-resistance and gate charge, thereby providing superior switching performance. It is packaged in a PowerFLAT 5x6 double island package, making it suitable for high-performance applications in the automotive sector.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)100 V
RDS(on) (On-Resistance)25 mΩ (typ.)
ID (Drain Current)7.8 A
PackagePowerFLAT 5x6 double island
TechnologySTripFET™ F3

Key Features

  • Low on-resistance (RDS(on)) of 25 mΩ (typ.) to minimize power losses.
  • Low gate charge to enhance switching performance.
  • Automotive-grade reliability and robustness.
  • PowerFLAT 5x6 double island package for efficient heat dissipation and compact design.

Applications

The STL8DN10LF3 is primarily designed for use in automotive applications, including but not limited to:

  • Power management systems.
  • Motor control and drive systems.
  • Battery management systems.
  • Other high-power electronic systems requiring efficient and reliable MOSFETs.

Q & A

  1. What is the typical on-resistance of the STL8DN10LF3?
    The typical on-resistance (RDS(on)) is 25 mΩ.
  2. What is the maximum drain-source voltage (VDS) for the STL8DN10LF3?
    The maximum drain-source voltage (VDS) is 100 V.
  3. What is the maximum drain current (ID) for the STL8DN10LF3?
    The maximum drain current (ID) is 7.8 A.
  4. What technology is used in the STL8DN10LF3?
    The STL8DN10LF3 uses STMicroelectronics' STripFET™ F3 technology.
  5. In what package is the STL8DN10LF3 available?
    The STL8DN10LF3 is available in a PowerFLAT 5x6 double island package.
  6. What are the primary applications of the STL8DN10LF3?
    The primary applications include automotive power management, motor control, battery management, and other high-power electronic systems.
  7. Is the STL8DN10LF3 automotive-grade?
    Yes, the STL8DN10LF3 is an automotive-grade component.
  8. What are the benefits of the low gate charge in the STL8DN10LF3?
    The low gate charge enhances the switching performance of the MOSFET.
  9. Where can I find detailed specifications for the STL8DN10LF3?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website and other electronic component databases.
  10. What is the significance of the PowerFLAT 5x6 double island package?
    The PowerFLAT 5x6 double island package provides efficient heat dissipation and a compact design, making it suitable for high-performance applications.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:35mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:20.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:970pF @ 25V
Power - Max:70W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PowerFlat™ (5x6)
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