STF10N105K5
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STMicroelectronics STF10N105K5

Manufacturer No:
STF10N105K5
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 1050V 6A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF10N105K5 is a high-voltage N-channel Power MOSFET designed by STMicroelectronics using the innovative MDmesh™ K5 technology. This proprietary vertical structure enhances the device's performance and efficiency. The STF10N105K5 is part of STMicroelectronics' STPOWER family, known for its high reliability and robustness in various power management applications.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 1050 V
RDS(on) (Drain-Source On-Resistance) 1 Ω
ID (Drain Current) 6 A
FET Type N-Channel
Technology MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
Package TO-220FP
Part Status Active

Key Features

  • High Voltage Capability: The STF10N105K5 can handle a drain-source voltage of up to 1050 V, making it suitable for high-voltage applications.
  • Low On-Resistance: With a typical on-resistance of 1 Ω, this MOSFET minimizes power losses and enhances efficiency.
  • High Drain Current: It can handle a continuous drain current of 6 A, supporting a wide range of power requirements.
  • MDmesh™ K5 Technology: This proprietary technology ensures ultra-low gate charge, reducing switching losses and improving overall performance.
  • Robust Package: The TO-220FP package provides good thermal dissipation and mechanical stability.

Applications

  • Power Supplies: Suitable for use in high-voltage power supplies, including switch-mode power supplies and DC-DC converters.
  • Motor Control: Can be used in motor control applications due to its high current handling and low on-resistance.
  • Industrial Automation: Ideal for various industrial automation applications requiring high reliability and efficiency.
  • Renewable Energy Systems: Used in solar and wind power systems for efficient power management.

Q & A

  1. What is the maximum drain-source voltage of the STF10N105K5?

    The maximum drain-source voltage is 1050 V.

  2. What is the typical on-resistance of the STF10N105K5?

    The typical on-resistance is 1 Ω.

  3. What is the maximum continuous drain current of the STF10N105K5?

    The maximum continuous drain current is 6 A.

  4. What technology is used in the STF10N105K5?

    The STF10N105K5 uses MDmesh™ K5 technology.

  5. In what package is the STF10N105K5 available?

    The STF10N105K5 is available in the TO-220FP package.

  6. What are some common applications of the STF10N105K5?

    Common applications include power supplies, motor control, industrial automation, and renewable energy systems.

  7. Why is the MDmesh™ K5 technology important?

    The MDmesh™ K5 technology reduces gate charge and switching losses, enhancing overall performance and efficiency.

  8. Is the STF10N105K5 suitable for high-temperature environments?

    Yes, it is designed to operate in a variety of temperature conditions, but specific temperature limits should be checked in the datasheet.

  9. Where can I find detailed specifications for the STF10N105K5?

    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through authorized distributors like Digi-Key, Mouser, etc.

  10. Is the STF10N105K5 RoHS compliant?

    Yes, the STF10N105K5 is RoHS compliant, adhering to environmental regulations.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1050 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.3Ohm @ 3A, 10V
Vgs(th) (Max) @ Id:5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 10 V
Vgs (Max):30V
Input Capacitance (Ciss) (Max) @ Vds:545 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):30W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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