STD95N4LF3
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STMicroelectronics STD95N4LF3

Manufacturer No:
STD95N4LF3
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 80A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD95N4LF3 is an N-channel enhancement mode Power MOSFET produced by STMicroelectronics using their advanced STripFET™ III technology. This device is designed to minimize on-resistance and gate charge, providing superior switching performance. It is packaged in a DPAK (TO-252) package, making it suitable for a variety of high-power switching applications.

Key Specifications

Parameter Value Unit
Drain-Source Voltage (VDS) 40 V
Gate-Source Voltage (VGS) ±16 V
Continuous Drain Current (ID) at TC = 25°C 80 A
Continuous Drain Current (ID) at TC = 100°C 65 A
Pulsed Drain Current (IDM) 320 A
Total Dissipation at TC = 25°C 110 W
Static Drain-Source On-Resistance (RDS(on)) at VGS = 10V, ID = 40A 5.0 - 6.0
Gate Threshold Voltage (VGS(th)) 1 - 2.5 V
Thermal Resistance Junction-Case (Rthj-case) 1.36 °C/W
Thermal Resistance Junction-PCB (Rthj-pcb) 50 °C/W

Key Features

  • 100% avalanche tested
  • Logic level drive
  • Low on-resistance (RDS(on)) of 5.0 - 6.0 mΩ at VGS = 10V, ID = 40A
  • High continuous drain current (ID) of 80A at TC = 25°C
  • High pulsed drain current (IDM) of 320A
  • Low gate charge for superior switching performance
  • Robust source-drain diode with low forward on voltage

Applications

The STD95N4LF3 is suitable for various high-power switching applications, including:

  • Automotive systems
  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Industrial power management
  • High-frequency switching circuits

Q & A

  1. What is the maximum drain-source voltage (VDS) of the STD95N4LF3?

    The maximum drain-source voltage (VDS) is 40V.

  2. What is the continuous drain current (ID) at TC = 25°C?

    The continuous drain current (ID) at TC = 25°C is 80A.

  3. What is the typical on-resistance (RDS(on)) of the STD95N4LF3?

    The typical on-resistance (RDS(on)) is 5.0 - 6.0 mΩ at VGS = 10V, ID = 40A.

  4. What is the gate threshold voltage (VGS(th)) range?

    The gate threshold voltage (VGS(th)) range is 1 - 2.5V.

  5. What is the thermal resistance junction-case (Rthj-case) of the STD95N4LF3?

    The thermal resistance junction-case (Rthj-case) is 1.36°C/W.

  6. What type of package does the STD95N4LF3 come in?

    The STD95N4LF3 comes in a DPAK (TO-252) package.

  7. Is the STD95N4LF3 100% avalanche tested?

    Yes, the STD95N4LF3 is 100% avalanche tested.

  8. What are some common applications for the STD95N4LF3?

    Common applications include automotive systems, power supplies, motor control, industrial power management, and high-frequency switching circuits.

  9. What is the maximum pulsed drain current (IDM) of the STD95N4LF3?

    The maximum pulsed drain current (IDM) is 320A.

  10. What is the operating junction temperature range of the STD95N4LF3?

    The operating junction temperature range is -55 to 175°C.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:6mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:70 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number STD95N4LF3 STD95N4F3
Manufacturer STMicroelectronics STMicroelectronics
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 6mOhm @ 40A, 10V 6.5mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 70 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±16V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V 2200 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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