STD15P6F6AG
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STMicroelectronics STD15P6F6AG

Manufacturer No:
STD15P6F6AG
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 10A DPAK
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The STD15P6F6AG is a P-channel Power MOSFET developed by STMicroelectronics using the advanced STripFET™ F6 technology. This device features a new trench gate structure, which enhances its performance and efficiency. It is designed to meet the stringent requirements of various applications, particularly in the automotive sector, and is AEC-Q101 qualified.

Key Specifications

ParameterValue
Drain-Source Breakdown Voltage (BVDSS)-100 V
On-Resistance (Rds(on))0.13 Ω (typ.), 0.16 Ω (max.)
Drain Current (ID)-10 A
Gate Threshold Voltage (Vgs(th))4.5 V
Zero Gate Voltage Drain Current (IDSS)VDS = -80V, VGS = 0V

Key Features

  • Very low on-resistance (Rds(on)) of 0.13 Ω (typ.) and 0.16 Ω (max.)
  • Very low gate charge
  • High efficiency and reliability
  • AEC-Q101 qualified for automotive applications
  • New trench gate structure using STripFET™ F6 technology

Applications

The STD15P6F6AG is primarily designed for automotive applications due to its AEC-Q101 qualification. It is suitable for use in various automotive systems that require high efficiency, low on-resistance, and high reliability. Other potential applications include power management in industrial and consumer electronics where similar performance characteristics are needed.

Q & A

  1. What is the STD15P6F6AG? The STD15P6F6AG is a P-channel Power MOSFET developed by STMicroelectronics using the STripFET™ F6 technology.
  2. What is the drain-source breakdown voltage (BVDSS) of the STD15P6F6AG? The BVDSS is -100 V.
  3. What is the typical on-resistance (Rds(on)) of the STD15P6F6AG? The typical Rds(on) is 0.13 Ω.
  4. What is the maximum drain current (ID) of the STD15P6F6AG? The maximum ID is -10 A.
  5. Is the STD15P6F6AG AEC-Q101 qualified? Yes, it is AEC-Q101 qualified for automotive applications.
  6. What technology is used in the STD15P6F6AG? It uses the STripFET™ F6 technology with a new trench gate structure.
  7. What are the key features of the STD15P6F6AG? Key features include very low on-resistance, very low gate charge, and high efficiency and reliability.
  8. What are the primary applications of the STD15P6F6AG? The primary applications are in the automotive sector, but it can also be used in industrial and consumer electronics.
  9. What is the gate threshold voltage (Vgs(th)) of the STD15P6F6AG? The gate threshold voltage is 4.5 V.
  10. Where can I find detailed specifications of the STD15P6F6AG? Detailed specifications can be found in the datasheet available on the STMicroelectronics website and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:160mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:6.4 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 48 V
FET Feature:- 
Power Dissipation (Max):35W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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