Overview
The STB46N30M5 is an automotive-grade N-channel Power MOSFET manufactured by STMicroelectronics. It is based on the innovative MDmesh™ V Power MOSFET technology, combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. This device is particularly suited for applications requiring superior power density and outstanding efficiency due to its extremely low on-resistance.
The STB46N30M5 is AEC-Q101 qualified, making it highly reliable for use in automotive and other demanding environments. It is packaged in a D2PAK package, which is convenient for high-power applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Order Code | STB46N30M5 | |
| Channel Type | N-Channel | |
| Drain-Source Voltage (Vds) | 300 | V |
| Gate-Source Voltage (Vgs) | ±25 | V |
| Drain Current (Id) | 53 A (continuous at TC = 25 °C) | A |
| Drain Current (Id) at TC = 100 °C | 34 A | A |
| Pulsed Drain Current (Idm) | 212 A | A |
| Static Drain-Source On-State Resistance (Rds(on)) | 0.037 Ω (typ.), 0.04 Ω (max.) | Ω |
| Maximum Junction Temperature (Tj) | 150 | °C |
| Thermal Resistance Junction-Case (Rthj-case) | 0.5 | °C/W |
| Thermal Resistance Junction-PCB (Rthj-pcb) | 30 | °C/W |
| Package | D2PAK |
Key Features
- Designed for automotive applications and AEC-Q101 qualified.
- Amongst the best Rds(on) * area, providing extremely low on-resistance.
- High dv/dt capability, ensuring excellent switching performance.
- Easy to drive due to its low gate charge.
- 100% avalanche tested for reliability.
- Excellent switching performance and high power density.
Applications
The STB46N30M5 is primarily used in switching applications where high power density and efficiency are crucial. These applications include:
- Automotive systems, such as power steering, fuel injection, and anti-lock braking systems (ABS).
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- High-frequency switching circuits.
Q & A
- What is the maximum drain-source voltage of the STB46N30M5?
The maximum drain-source voltage (Vds) is 300 V.
- What is the maximum continuous drain current at 25 °C for the STB46N30M5?
The maximum continuous drain current (Id) at 25 °C is 53 A.
- What is the typical on-state resistance (Rds(on)) of the STB46N30M5?
The typical on-state resistance (Rds(on)) is 0.037 Ω.
- What is the maximum junction temperature for the STB46N30M5?
The maximum junction temperature (Tj) is 150 °C.
- Is the STB46N30M5 AEC-Q101 qualified?
- What package type is the STB46N30M5 available in?
The STB46N30M5 is available in a D2PAK package.
- What are the key features of the STB46N30M5?
The key features include low on-resistance, high dv/dt capability, excellent switching performance, ease of driving, and 100% avalanche testing.
- What are the typical applications of the STB46N30M5?
The typical applications include automotive systems, power supplies, motor control, and high-frequency switching circuits.
- What is the thermal resistance junction-case (Rthj-case) of the STB46N30M5?
The thermal resistance junction-case (Rthj-case) is 0.5 °C/W.
- What is the maximum pulse drain current (Idm) of the STB46N30M5?
The maximum pulse drain current (Idm) is 212 A.
