Overview
The SCT1000N170 is a high-performance silicon carbide (SiC) Power MOSFET developed by STMicroelectronics. This device is designed to offer superior efficiency and reliability in high-voltage applications. With its advanced SiC technology, the SCT1000N170 provides fast switching performance, low losses, and high operating temperatures, making it an ideal choice for various power conversion systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| VDS (Drain-Source Voltage) | 1700 | V |
| RDS(on) (On-State Resistance) | 1.0 (typ.) / 1.4 (max.) | Ω |
| ID (Drain Current) | 7 | A |
| TJ (Junction Temperature) | 200 | °C |
| Package | HiP247 |
Key Features
- High speed switching performance for reduced switching losses.
- Very fast and robust intrinsic body diode.
- Low capacitances to minimize gate charge and switching times.
- Very high operating junction temperature capability (TJ = 200 °C) for reliable operation in demanding environments.
Applications
- Power conversion systems, including DC-DC converters and AC-DC converters.
- Electric vehicle charging infrastructure and on-board chargers.
- Renewable energy systems, such as solar and wind power inverters.
- Industrial power supplies and motor drives.
Q & A
- What is the maximum drain-source voltage of the SCT1000N170?
The maximum drain-source voltage (VDS) of the SCT1000N170 is 1700 V.
- What is the typical on-state resistance of the SCT1000N170?
The typical on-state resistance (RDS(on)) of the SCT1000N170 is 1.0 Ω, with a maximum value of 1.4 Ω.
- What is the maximum drain current of the SCT1000N170?
The maximum drain current (ID) of the SCT1000N170 is 7 A.
- What is the maximum junction temperature of the SCT1000N170?
The maximum junction temperature (TJ) of the SCT1000N170 is 200 °C.
- In what package is the SCT1000N170 available?
The SCT1000N170 is available in the HiP247 package.
- What are the key benefits of using SiC technology in the SCT1000N170?
The key benefits include high speed switching performance, low capacitances, and very high operating junction temperature capability.
- What types of applications is the SCT1000N170 suited for?
The SCT1000N170 is suited for power conversion systems, electric vehicle charging infrastructure, renewable energy systems, and industrial power supplies and motor drives.
- How does the SCT1000N170 compare to traditional silicon-based MOSFETs?
The SCT1000N170 offers superior efficiency, faster switching times, and higher operating temperatures compared to traditional silicon-based MOSFETs.
- Is the SCT1000N170 automotive-grade?
There is an automotive-grade version of the SCT1000N170, denoted as SCT1000N170AG, which meets specific automotive reliability and performance standards.
- Where can I find detailed datasheets and technical documentation for the SCT1000N170?
Detailed datasheets and technical documentation can be found on the STMicroelectronics official website and through authorized distributors like Mouser and Future Electronics.
