Overview
The PD57018-E is a high-performance RF power transistor designed by STMicroelectronics. It is a common source N-channel, enhancement-mode lateral field-effect transistor (LDMOS) optimized for high gain and broad band commercial and industrial applications. This device operates at 28 V in common source mode and is capable of handling frequencies up to 1 GHz. The PD57018-E features ST’s latest LDMOS technology, ensuring excellent gain, linearity, and reliability. It is packaged in the innovative PowerSO-10RF plastic package, which is the first ST JEDEC approved, high power SMD package, offering high reliability and ease of assembly.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-source voltage (V(BR)DSS) | 65 | V |
| Gate-source voltage (VGS) | ± 20 | V |
| Drain current (ID) | 2.5 | A |
| Power dissipation (PDISS) @ TC = 70°C | 31.7 | W |
| Max. operating junction temperature (TJ) | 165 | °C |
| Storage temperature (TSTG) | -65 to +150 | °C |
| Junction - case thermal resistance (RthJC) | 3.0 | °C/W |
| Output Power (POUT) @ 945 MHz/28 V | 18 W | W |
| Power Gain @ 945 MHz/28 V | 16.5 dB | dB |
Key Features
- Excellent thermal stability
- Common source configuration
- High gain and broad band performance
- Superior linearity and reliability
- Innovative PowerSO-10RF plastic package for high reliability and ease of assembly
- Optimized for RF applications with high power handling
Applications
The PD57018-E is particularly suited for base station applications due to its superior linearity performance. It is also applicable in various high-power RF systems, including commercial and industrial radio frequency amplifiers, where high gain, broad band performance, and reliability are critical.
Q & A
- What is the maximum drain-source voltage of the PD57018-E?
The maximum drain-source voltage (V(BR)DSS) is 65 V. - What is the maximum gate-source voltage of the PD57018-E?
The maximum gate-source voltage (VGS) is ± 20 V. - What is the maximum drain current of the PD57018-E?
The maximum drain current (ID) is 2.5 A. - What is the maximum operating junction temperature of the PD57018-E?
The maximum operating junction temperature (TJ) is 165 °C. - What is the storage temperature range for the PD57018-E?
The storage temperature range (TSTG) is -65 to +150 °C. - What is the typical output power of the PD57018-E at 945 MHz and 28 V?
The typical output power (POUT) at 945 MHz and 28 V is 18 W. - What is the typical power gain of the PD57018-E at 945 MHz and 28 V?
The typical power gain at 945 MHz and 28 V is 16.5 dB. - What package types are available for the PD57018-E?
The PD57018-E is available in PowerSO-10RF packages with formed lead and straight lead options, and can be packed in tubes or on tape and reel. - What are the key applications of the PD57018-E?
The PD57018-E is primarily used in base station applications and other high-power RF systems requiring high gain and broad band performance. - What is the significance of the PowerSO-10RF package?
The PowerSO-10RF package is the first ST JEDEC approved, high power SMD package, offering high reliability and ease of assembly for RF applications.
