NE5550779A-T1A-A
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Renesas Electronics America Inc NE5550779A-T1A-A

Manufacturer No:
NE5550779A-T1A-A
Manufacturer:
Renesas Electronics America Inc
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NE5550779A-T1A-A is a high-performance RF Power N-Channel LDMOS (Laterally Diffused Metal Oxide Semiconductor) FET manufactured by Renesas Electronics America Inc. This device is designed for high-frequency applications, particularly in the RF domain. It is known for its robust performance, reliability, and compliance with RoHS standards, making it suitable for a variety of modern electronic systems.

Key Specifications

CategoryValue
FamilyRF FETs
Transistor TypeLDMOS
Frequency900MHz
Gain22dB
Power - Output38.5dBm
Current Rating2.1A
Current - Test140mA
Voltage - Rated30V
Voltage - Test7.5V
Package / Case4-SMD, Flat Leads
PackagingTape & Reel (TR)
RoHSCompliant

Key Features

  • High gain of 22dB, making it suitable for amplification in RF circuits.
  • High power output of 38.5dBm, enabling it to handle significant power requirements.
  • Rated voltage of 30V and current rating of 2.1A, providing robust performance.
  • RoHS compliance, ensuring environmental sustainability.
  • Compact 4-SMD package with flat leads, facilitating easy integration into modern electronic designs.

Applications

The NE5550779A-T1A-A is primarily used in RF power amplification applications, including but not limited to:

  • Wireless communication systems (e.g., cellular networks, Wi-Fi).
  • Radar systems.
  • RF transmitters and receivers.
  • Medical equipment requiring high-frequency signals.
  • Industrial control systems that need reliable RF amplification.

Q & A

  1. What is the primary application of the NE5550779A-T1A-A?
    The primary application is in RF power amplification, particularly in wireless communication systems, radar systems, and other high-frequency signal applications.
  2. What is the gain of the NE5550779A-T1A-A?
    The gain of the NE5550779A-T1A-A is 22dB.
  3. What is the power output of the NE5550779A-T1A-A?
    The power output is 38.5dBm.
  4. Is the NE5550779A-T1A-A RoHS compliant?
    Yes, the NE5550779A-T1A-A is RoHS compliant.
  5. What is the package type of the NE5550779A-T1A-A?
    The package type is 4-SMD with flat leads.
  6. What is the rated voltage and current of the NE5550779A-T1A-A?
    The rated voltage is 30V, and the current rating is 2.1A.
  7. What is the frequency range of the NE5550779A-T1A-A?
    The frequency range is up to 900MHz.
  8. Who is the manufacturer of the NE5550779A-T1A-A?
    The manufacturer is Renesas Electronics America Inc.
  9. Is the NE5550779A-T1A-A available in bulk packaging?
    Yes, it is available in bulk packaging.
  10. What is the typical test current for the NE5550779A-T1A-A?
    The typical test current is 140mA.

Product Attributes

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In Stock

$3.58
108

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