Overview
The NVD6416ANLT4G-VF01 is a high-performance N-Channel power MOSFET produced by onsemi, formerly known as Fairchild Semiconductor. This device is designed for automotive and other applications that require high reliability and robust performance. It features a low on-resistance (Rds(on)) and high current capability, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain to Source Voltage | Vdss | 100 | V |
| Gate to Source Voltage - Continuous | Vgs | ±20 | V |
| Continuous Drain Current @ 25°C | Id | 19 | A |
| Power Dissipation @ 25°C | Pd | 71 | W |
| Gate Threshold Voltage @ Id | Vgs(th) | 2.2 @ 250µA | V |
| Gate Charge (Qg) @ Vgs | Qg | 40 nC @ 10 V | nC |
| On-Resistance (Rds(on)) @ Id, Vgs | Rds(on) | 74 mΩ @ 19A, 10V | mΩ |
| Input Capacitance (Ciss) @ Vds | Ciss | 1000 pF @ 25 V | pF |
| Operating Temperature | Tj | -55°C ~ 175°C | °C |
| Package / Case | - | TO-252-3, DPAK-3, SC-63 | - |
Key Features
- Low On-Resistance (Rds(on)): 74 mΩ @ 19A, 10V, ensuring efficient power management.
- High Current Capability: Continuous drain current of 19A at 25°C.
- AEC-Q101 Qualified: Meets automotive standards for reliability and performance.
- 100% Avalanche Tested: Ensures robustness against high-energy pulses.
- Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
- Wide Operating Temperature Range: -55°C to 175°C, suitable for various environmental conditions.
Applications
The NVD6416ANLT4G-VF01 is designed for use in a variety of applications, including:
- Automotive Systems: Power management, motor control, and battery management systems.
- Industrial Power Supplies: High-efficiency switching power supplies and DC-DC converters.
- Consumer Electronics: Power management in devices such as laptops, tablets, and smartphones.
- Renewable Energy Systems: Solar and wind power systems requiring high reliability and efficiency.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the NVD6416ANLT4G-VF01?
The maximum drain-to-source voltage (Vdss) is 100 V.
- What is the continuous drain current (Id) at 25°C?
The continuous drain current (Id) at 25°C is 19 A.
- What is the gate threshold voltage (Vgs(th))?
The gate threshold voltage (Vgs(th)) is 2.2 V at 250 µA.
- Is the NVD6416ANLT4G-VF01 AEC-Q101 qualified?
Yes, the NVD6416ANLT4G-VF01 is AEC-Q101 qualified.
- What is the maximum gate-to-source voltage (Vgs)?
The maximum gate-to-source voltage (Vgs) is ±20 V.
- What is the on-resistance (Rds(on)) of the device?
The on-resistance (Rds(on)) is 74 mΩ at 19 A, 10 V.
- What is the input capacitance (Ciss) of the device?
The input capacitance (Ciss) is 1000 pF at 25 V.
- What is the operating temperature range of the device?
The operating temperature range is -55°C to 175°C.
- Is the NVD6416ANLT4G-VF01 Pb-Free and RoHS compliant?
Yes, the NVD6416ANLT4G-VF01 is Pb-Free and RoHS compliant.
- What package type is the NVD6416ANLT4G-VF01 available in?
The device is available in the TO-252-3, DPAK-3, and SC-63 packages.
