BC859CW_R1_00001
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Panjit International Inc. BC859CW_R1_00001

Manufacturer No:
BC859CW_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859CW_R1_00001 is a PNP general-purpose transistor manufactured by Panjit International Inc. This transistor is part of the BC856 to BC859 series, known for their versatility and reliability in various electronic applications. The BC859CW is designed with an epitaxial silicon, planar structure, making it suitable for a wide range of general-purpose amplifier applications.

Key Specifications

Parameter Symbol Value Units
Collector - Emitter Voltage VCEO -30 V
Collector - Base Voltage VCBO -30 V
Emitter - Base Voltage VEBO -5 V
Collector Current - Continuous IC 100 mA mA
Power Dissipation PTOT 250 mW mW
Storage Temperature Range TSTG -55 to 150 °C
Junction Temperature Range TJ -55 to 150 °C
DC Current Gain (IC = -10 mA, VCE = -5 V) hFE 270
DC Current Gain (IC = -2.0 mA, VCE = -5 V) hFE 520
Collector - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VCE(sat) -0.3 V
Base - Emitter Saturation Voltage (IC = -10 mA, IB = -0.5 mA) VBE(sat) -0.7 V

Key Features

  • PNP epitaxial silicon, planar design
  • General purpose amplifier applications
  • Lead-free and compliant with EU RoHS 2011/65/EU directives
  • Green molding compound as per IEC61249 Std. (Halogen Free)
  • Complimentary (NPN) devices available: BC846AW/BC847AW/BC848AW/BC849BW Series
  • SOT-323 (SC-70) package
  • Solderable terminals per MIL-STD-750, Method 2026

Applications

The BC859CW transistor is suitable for a variety of general-purpose amplifier applications, including but not limited to:

  • Audio amplifiers
  • Switching circuits
  • Driver stages
  • General-purpose switching and amplification in electronic devices

Q & A

  1. What is the collector-emitter voltage rating of the BC859CW transistor?

    The collector-emitter voltage rating of the BC859CW transistor is -30 V.

  2. What is the maximum collector current for the BC859CW transistor?

    The maximum collector current for the BC859CW transistor is 100 mA.

  3. What is the power dissipation rating of the BC859CW transistor?

    The power dissipation rating of the BC859CW transistor is 250 mW.

  4. Is the BC859CW transistor lead-free and RoHS compliant?
  5. What is the package type of the BC859CW transistor?

    The BC859CW transistor is packaged in an SOT-323 (SC-70) case.

  6. What are the complimentary NPN devices for the BC859CW transistor?

    The complimentary NPN devices for the BC859CW transistor include the BC846AW, BC847AW, BC848AW, and BC849BW series.

  7. What is the DC current gain of the BC859CW transistor at IC = -10 mA and VCE = -5 V?

    The DC current gain of the BC859CW transistor at IC = -10 mA and VCE = -5 V is typically 270.

  8. What is the collector-emitter saturation voltage of the BC859CW transistor?

    The collector-emitter saturation voltage of the BC859CW transistor is typically -0.3 V at IC = -10 mA and IB = -0.5 mA.

  9. What are the storage and junction temperature ranges for the BC859CW transistor?

    The storage and junction temperature ranges for the BC859CW transistor are -55 to 150°C.

  10. Are the terminals of the BC859CW transistor solderable?

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:420 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC859CW_R1_00001 BC859C_R1_00001 BC858CW_R1_00001 BC859BW_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc. Panjit International Inc. Panjit International Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V 420 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 330 mW 250 mW 250 mW
Frequency - Transition 200MHz 200MHz 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-23 SOT-323 SOT-323

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