BC859BW_R1_00001
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Panjit International Inc. BC859BW_R1_00001

Manufacturer No:
BC859BW_R1_00001
Manufacturer:
Panjit International Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 30V 0.1A SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC859BW_R1_00001 is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Panjit International Inc. This transistor is designed for a wide range of applications, including general-purpose amplifier circuits. It features a PNP epitaxial silicon, planar design, making it suitable for various electronic projects.

Key Specifications

Parameter Symbol Value Units
Collector-Emitter Voltage VCEO -30 V
Collector-Base Voltage VCBO -30 V
Emitter-Base Voltage VEBO -5 V
Collector Current - Continuous IC 100 mA
Power Dissipation Pd 250 mW
DC Current Gain (IC=-10mA, VCE=-5V) hFE 180-450
Collector-Emitter Saturation Voltage (IC=-10mA, IB=-0.5mA) VCE(sat) 0.026-0.073 V
Package/Case SOT-323 (SC-70)

Key Features

  • PNP epitaxial silicon, planar design
  • General-purpose amplifier applications
  • Collector current IC = 100mA
  • Complimentary NPN devices available (e.g., BC846AW, BC847AW, BC848AW, BC849BW series)
  • Lead-free and compliant with EU RoHS 2011/65/EU directives
  • Green molding compound as per IEC61249 Std. (Halogen Free)
  • Solderable terminals per MIL-STD-750, Method 2026

Applications

  • General-purpose amplifier circuits
  • Switching and driver applications
  • Audio and signal processing circuits
  • Automotive and industrial control systems

Q & A

  1. What is the collector-emitter voltage rating of the BC859BW_R1_00001 transistor?

    The collector-emitter voltage rating is -30V.

  2. What is the maximum collector current for the BC859BW_R1_00001 transistor?

    The maximum collector current is 100mA.

  3. What package type is the BC859BW_R1_00001 transistor available in?

    The transistor is available in the SOT-323 (SC-70) package.

  4. Is the BC859BW_R1_00001 transistor lead-free and RoHS compliant?

    Yes, it is lead-free and compliant with EU RoHS 2011/65/EU directives.

  5. What are the typical applications for the BC859BW_R1_00001 transistor?

    General-purpose amplifier circuits, switching and driver applications, audio and signal processing circuits, and automotive and industrial control systems.

  6. What is the power dissipation rating of the BC859BW_R1_00001 transistor?

    The power dissipation rating is 250mW.

  7. What is the DC current gain range for the BC859BW_R1_00001 transistor?

    The DC current gain range is 180-450 at IC=-10mA and VCE=-5V.

  8. Is the BC859BW_R1_00001 transistor suitable for high-frequency applications?

    Yes, it has a high-frequency response, making it suitable for various high-frequency applications.

  9. What are the environmental compliance standards for the BC859BW_R1_00001 transistor?

    The transistor complies with EU RoHS 2011/65/EU directives and uses green molding compound as per IEC61249 Std. (Halogen Free).

  10. Where can I find detailed specifications and datasheets for the BC859BW_R1_00001 transistor?

    Detailed specifications and datasheets can be found on the manufacturer's website, as well as on distributor websites such as Mouser and Global-IC.com.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):30 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:200MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number BC859BW_R1_00001 BC859B_R1_00001 BC859CW_R1_00001 BC858BW_R1_00001
Manufacturer Panjit International Inc. Panjit International Inc. Panjit International Inc. Panjit International Inc.
Product Status Active Active Active Active
Transistor Type PNP PNP PNP PNP
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 30 V 30 V 30 V 30 V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 220 @ 2mA, 5V 420 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 330 mW 250 mW 250 mW
Frequency - Transition 200MHz 200MHz 200MHz 200MHz
Operating Temperature -55°C ~ 150°C (TJ) -50°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-23 SOT-323 SOT-323

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