SVD5806NT4G
  • Share:

onsemi SVD5806NT4G

Manufacturer No:
SVD5806NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 33A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SVD5806NT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. The SVD5806NT4G is packaged in a surface mount DPAK (TO-252) package, which is lead-free and suitable for high-power switching applications.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current33 A
Power Dissipation (Tc)40 W
Package TypeDPAK (TO-252), Pb-Free

Key Features

  • High continuous drain current of 33 A
  • Low on-resistance for efficient power handling
  • High drain-source breakdown voltage of 40 V
  • Surface mount DPAK package for easy integration
  • Lead-free and RoHS compliant

Applications

The SVD5806NT4G is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and amplification in industrial and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the transistor polarity of the SVD5806NT4G?
    The transistor polarity is N-Channel.
  2. What is the continuous drain current of the SVD5806NT4G?
    The continuous drain current is 33 A.
  3. What is the drain-source breakdown voltage of the SVD5806NT4G?
    The drain-source breakdown voltage is 40 V.
  4. What type of package does the SVD5806NT4G use?
    The SVD5806NT4G is packaged in a surface mount DPAK (TO-252) package.
  5. Is the SVD5806NT4G lead-free?
    Yes, the SVD5806NT4G is lead-free and RoHS compliant.
  6. What are some common applications for the SVD5806NT4G?
    Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.
  7. What is the power dissipation of the SVD5806NT4G at Tc?
    The power dissipation at Tc is 40 W.
  8. Where can I find detailed specifications for the SVD5806NT4G?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key and Mouser.
  9. Is the SVD5806NT4G suitable for high-power switching applications?
    Yes, the SVD5806NT4G is designed for high-power switching applications.
  10. What is the typical use case for the DPAK package of the SVD5806NT4G?
    The DPAK package is typically used for surface mount applications requiring high power handling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV30/AA
DD15S2S5WV30/AA
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
DD26S2S000
DD26S2S000
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HES/AA
CBC9W4S10HES/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10H0S/AA
CBC13W3S10H0S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S50TX/AA
DD26S2S50TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V5X/AA
DD26S2S0V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number SVD5806NT4G SVD5803NT4G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 10V 5.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 51 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 3220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
BUK7Y2R0-40HX
BUK7Y2R0-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
STB100N10F7
STB100N10F7
STMicroelectronics
MOSFET N-CH 100V 80A D2PAK
STU10N60M2
STU10N60M2
STMicroelectronics
MOSFET N-CH 600V 7.5A IPAK
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK

Related Product By Brand

1N5366BRL
1N5366BRL
onsemi
DIODE ZENER 39V 5W AXIAL
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FDS8935
FDS8935
onsemi
MOSFET 2P-CH 80V 2.1A 8SOIC
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74AC273DTR2G
MC74AC273DTR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20TSSOP
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN