SVD5806NT4G
  • Share:

onsemi SVD5806NT4G

Manufacturer No:
SVD5806NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 33A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SVD5806NT4G is a high-performance N-Channel power MOSFET produced by onsemi. This device is designed for a wide range of applications requiring high current handling and low on-resistance. The SVD5806NT4G is packaged in a surface mount DPAK (TO-252) package, which is lead-free and suitable for high-power switching applications.

Key Specifications

ParameterValue
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current33 A
Power Dissipation (Tc)40 W
Package TypeDPAK (TO-252), Pb-Free

Key Features

  • High continuous drain current of 33 A
  • Low on-resistance for efficient power handling
  • High drain-source breakdown voltage of 40 V
  • Surface mount DPAK package for easy integration
  • Lead-free and RoHS compliant

Applications

The SVD5806NT4G is suitable for various high-power applications, including but not limited to:

  • Power supplies and DC-DC converters
  • Motor control and drive systems
  • Switching and amplification in industrial and automotive systems
  • High-frequency switching applications

Q & A

  1. What is the transistor polarity of the SVD5806NT4G?
    The transistor polarity is N-Channel.
  2. What is the continuous drain current of the SVD5806NT4G?
    The continuous drain current is 33 A.
  3. What is the drain-source breakdown voltage of the SVD5806NT4G?
    The drain-source breakdown voltage is 40 V.
  4. What type of package does the SVD5806NT4G use?
    The SVD5806NT4G is packaged in a surface mount DPAK (TO-252) package.
  5. Is the SVD5806NT4G lead-free?
    Yes, the SVD5806NT4G is lead-free and RoHS compliant.
  6. What are some common applications for the SVD5806NT4G?
    Common applications include power supplies, DC-DC converters, motor control systems, and high-frequency switching applications.
  7. What is the power dissipation of the SVD5806NT4G at Tc?
    The power dissipation at Tc is 40 W.
  8. Where can I find detailed specifications for the SVD5806NT4G?
    Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key and Mouser.
  9. Is the SVD5806NT4G suitable for high-power switching applications?
    Yes, the SVD5806NT4G is designed for high-power switching applications.
  10. What is the typical use case for the DPAK package of the SVD5806NT4G?
    The DPAK package is typically used for surface mount applications requiring high power handling.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:19mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:38 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:860 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):40W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
306

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200T20/AA
DD26S200T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V3X/AA
DD26S2S50V3X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60T2X
DD44S32S60T2X
CONN D-SUB HD RCPT 44P VERT SLDR

Similar Products

Part Number SVD5806NT4G SVD5803NT4G
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 40 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 19mOhm @ 15A, 10V 5.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V 51 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 860 pF @ 25 V 3220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 40W (Tc) 83W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
FDMC86160ET100
FDMC86160ET100
onsemi
MOSFET N-CH 100V 9A/43A POWER33
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STF9N60M2
STF9N60M2
STMicroelectronics
MOSFET N-CH 600V 5.5A TO220FP
PMZB290UNE,315
PMZB290UNE,315
NXP USA Inc.
MOSFET N-CH 20V 1A DFN1006B-3
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
BAS16M3T5G
BAS16M3T5G
onsemi
DIODE GEN PURP 100V 200MA SOT723
MMSZ5221BT1G
MMSZ5221BT1G
onsemi
DIODE ZENER 2.4V 500MW SOD123
MJD3055T4G
MJD3055T4G
onsemi
TRANS NPN 60V 10A DPAK
MJD44H11TF
MJD44H11TF
onsemi
TRANS NPN 80V 8A DPAK
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
MC74HCT125ADR2G
MC74HCT125ADR2G
onsemi
IC BUFFER NON-INVERT 6V 14SOIC
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC
FODM217CR2V
FODM217CR2V
onsemi
OPTOCOUPLER PHOTOTRANS MFP4