Overview
The SPZTA42T1G is a high-voltage NPN silicon transistor produced by onsemi. This surface-mount transistor is designed for applications requiring high collector-emitter voltage and moderate current handling. It is part of the SOT-223 package family and is AEC-Q101 qualified, making it suitable for automotive and other demanding applications. The device is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability and regulatory compliance.
Key Specifications
| Symbol | Characteristic | Value | Unit |
|---|---|---|---|
| VCEO | Collector-Emitter Voltage (Open Base) | 300 | Vdc |
| VCBO | Collector-Base Voltage (Open Emitter) | 300 | Vdc |
| VEBO | Emitter-Base Voltage (Open Collector) | 6.0 | Vdc |
| IC | Collector Current (DC) | 500 | mAdc |
| PD | Total Power Dissipation @ TA = 25°C | 1.5 | W |
| Tstg | Storage Temperature Range | -65 to +150 | °C |
| TJ | Junction Temperature | 150 | °C |
| RθJA | Thermal Resistance, Junction-to-Ambient | 83.3 | °C/W |
| fT | Current-Gain Bandwidth Product | 50 | MHz |
| VCE(sat) | Collector-Emitter Saturation Voltage | 0.5 | Vdc |
| VBE(sat) | Base-Emitter Saturation Voltage | 0.9 | Vdc |
Key Features
- AEC-Q101 qualified for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High collector-emitter voltage (VCEO) of 300 Vdc.
- Collector current (IC) of up to 500 mA.
- Total power dissipation of 1.5 W at TA = 25°C.
- Complement to PZTA92T1G.
- Suitable for surface mount applications with SOT-223 package.
Applications
The SPZTA42T1G transistor is suitable for a variety of applications, including:
- Automotive systems requiring high reliability and durability.
- Industrial control systems where high voltage and moderate current are necessary.
- Power management circuits in consumer electronics.
- General-purpose switching and amplification in electronic devices.
Q & A
- What is the collector-emitter voltage rating of the SPZTA42T1G transistor?
The collector-emitter voltage (VCEO) rating is 300 Vdc.
- What is the maximum collector current for the SPZTA42T1G transistor?
The maximum collector current (IC) is 500 mA.
- Is the SPZTA42T1G transistor RoHS compliant?
- What is the thermal resistance, junction-to-ambient (RθJA), for the SPZTA42T1G transistor?
The thermal resistance, junction-to-ambient (RθJA), is 83.3 °C/W.
- What is the current-gain bandwidth product (fT) of the SPZTA42T1G transistor?
The current-gain bandwidth product (fT) is 50 MHz.
- What is the collector-emitter saturation voltage (VCE(sat)) for the SPZTA42T1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.
- What is the base-emitter saturation voltage (VBE(sat)) for the SPZTA42T1G transistor?
The base-emitter saturation voltage (VBE(sat)) is 0.9 Vdc.
- What package type is the SPZTA42T1G transistor available in?
The SPZTA42T1G transistor is available in the SOT-223 package.
- Is the SPZTA42T1G transistor suitable for automotive applications?
- What is the storage temperature range for the SPZTA42T1G transistor?
The storage temperature range (Tstg) is -65 to +150 °C.
