Overview
The SMMBTA06LT1G is a high-performance NPN silicon transistor manufactured by onsemi. This device is part of the MMBTA06L series and is designed for a wide range of applications, including automotive and other sectors requiring stringent quality and reliability standards. The SMMBTA06LT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets the rigorous demands of automotive and industrial environments. It is also Pb-free, halogen-free, and RoHS compliant, making it an environmentally friendly option.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 80 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 4.0 | Vdc |
| Collector Current - Continuous | IC | 500 | mAdc |
| Electrostatic Discharge | ESD | HBM Class 3B, MM Class C, CDM Class IV | |
| DC Current Gain (IC = 10 mAdc, VCE = 1.0 Vdc) | hFE | 100 | |
| Collector-Emitter Saturation Voltage (IC = 100 mAdc, IB = 10 mAdc) | VCE(sat) | 0.25 | Vdc |
| Base-Emitter On Voltage (IC = 100 mAdc, VCE = 1.0 Vdc) | VBE(on) | 1.2 | Vdc |
| Current-Gain Bandwidth Product (IC = 10 mA, VCE = 2.0 V, f = 100 MHz) | fT | 100 | MHz |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
Key Features
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- High collector-emitter voltage (VCEO) of 80 Vdc and high collector-base voltage (VCBO) of 80 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.25 Vdc.
- High DC current gain (hFE) of 100.
- High current-gain bandwidth product (fT) of 100 MHz.
- Wide operating temperature range from -55°C to +150°C.
- Compact SOT-23 package, ideal for space-constrained designs.
Applications
- Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial control systems: Used in industrial control circuits where high reliability and robust performance are required.
- Power management: Employed in power management circuits for its high voltage and current handling capabilities.
- Switching circuits: Ideal for switching applications due to its fast switching times and high current-gain bandwidth product.
- General-purpose amplification: Can be used in general-purpose amplifier circuits requiring high gain and low saturation voltage.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the SMMBTA06LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 80 Vdc.
- Is the SMMBTA06LT1G transistor RoHS compliant?
Yes, the SMMBTA06LT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the DC current gain (hFE) of the SMMBTA06LT1G transistor?
The DC current gain (hFE) is 100.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SMMBTA06LT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What is the current-gain bandwidth product (fT) of the SMMBTA06LT1G transistor?
The current-gain bandwidth product (fT) is 100 MHz.
- What is the operating temperature range of the SMMBTA06LT1G transistor?
The operating temperature range is from -55°C to +150°C.
- What package type is used for the SMMBTA06LT1G transistor?
The SMMBTA06LT1G transistor is packaged in a SOT-23 (TO-236) package.
- Is the SMMBTA06LT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
- What are some common applications of the SMMBTA06LT1G transistor?
Common applications include automotive systems, industrial control systems, power management, switching circuits, and general-purpose amplification.
- What are the electrostatic discharge (ESD) ratings for the SMMBTA06LT1G transistor?
The ESD ratings are HBM Class 3B, MM Class C, and CDM Class IV.
