Overview
The S2SC4617G is an NPN silicon general-purpose amplifier transistor manufactured by onsemi. This transistor is designed for low power surface mount applications, particularly where board space is limited. It is housed in the SC-75/SOT-416 package, making it ideal for compact electronic designs. The S2SC4617G is suitable for a variety of general-purpose amplifier applications due to its high current gain and low collector-emitter saturation voltage.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | V(BR)CBO | 50 | Vdc |
| Collector-Emitter Voltage | V(BR)CEO | 50 | Vdc |
| Emitter-Base Voltage | V(BR)EBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| Power Dissipation | PD | 125 | mW |
| Junction Temperature | TJ | 150 | °C |
| Transition Frequency | fT | 180 | MHz |
| DC Current Gain (hFE) | hFE | 120 - 560 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 0.5 | Vdc |
Key Features
- High DC current gain (hFE) of 210-460 (typical)
- Low collector-emitter saturation voltage (VCE(sat)) of less than 0.5 V
- Available in 8 mm, 7-inch/3000 Unit Tape and Reel
- S Prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 Qualified and PPAP Capable
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
The S2SC4617G is suitable for various general-purpose amplifier applications, particularly in scenarios where board space is limited. It is ideal for use in surface mount designs and can be applied in automotive and other industries that require high reliability and compliance with stringent standards.
Q & A
- What is the maximum collector-base voltage of the S2SC4617G transistor?
The maximum collector-base voltage (V(BR)CBO) is 50 Vdc.
- What is the typical DC current gain (hFE) of the S2SC4617G transistor?
The typical DC current gain (hFE) is between 210 and 460.
- What is the maximum collector-emitter saturation voltage (VCE(sat)) of the S2SC4617G transistor?
The maximum collector-emitter saturation voltage (VCE(sat)) is less than 0.5 Vdc.
- What is the maximum junction temperature for the S2SC4617G transistor?
The maximum junction temperature (TJ) is 150 °C.
- Is the S2SC4617G transistor RoHS compliant?
- What is the transition frequency (fT) of the S2SC4617G transistor?
The transition frequency (fT) is 180 MHz.
- What package type is the S2SC4617G transistor housed in?
The S2SC4617G transistor is housed in the SC-75/SOT-416 package.
- What is the maximum collector current (IC) for the S2SC4617G transistor?
The maximum collector current (IC) is 100 mA.
- Is the S2SC4617G transistor suitable for automotive applications?
- What is the power dissipation (PD) of the S2SC4617G transistor?
The power dissipation (PD) is 125 mW.
