Overview
The NTMS7N03R2G is a power MOSFET produced by onsemi, designed for high-efficiency and reliability in various power management applications. This N-channel MOSFET features an ultra-low on-resistance (RDS(on)) and is packaged in a miniature SOIC-8 surface mount package. It is optimized for logic level gate drive, making it suitable for a wide range of applications where low power consumption and high performance are critical.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | Vdc |
| Drain-to-Gate Voltage | VDGR | 30 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±20 | Vdc |
| Drain Current - Continuous @ TA = 25°C | ID | 8.5 | A |
| Drain Current - Continuous @ TA = 70°C | ID | 6.8 | A |
| Drain Current - Pulsed | IDM | 25 | A |
| Thermal Resistance, Junction-to-Ambient | RθJA | 50 | °C/W |
| Total Power Dissipation @ TA = 25°C | PD | 2.5 | W |
| Gate Threshold Voltage | VGS(th) | 1.0 - 1.6 | Vdc |
| Static Drain-to-Source On-Resistance | RDS(on) | 18.6 - 23.5 | mΩ |
| Operating and Storage Temperature Range | TJ, Tstg | -55 to +150 | °C |
Key Features
- Ultra Low RDS(on) for higher efficiency and extended battery life.
- Logic Level Gate Drive for easy integration with microcontrollers and other logic devices.
- Miniature SOIC-8 surface mount package for compact designs.
- Avalanche Energy Specified for robust operation under transient conditions.
- IDSS Specified at Elevated Temperature for reliable performance across a wide temperature range.
- Pb-Free package for environmental compliance.
Applications
- DC-DC Converters: Ideal for high-efficiency power conversion.
- Power Management: Suitable for various power management circuits.
- Motor Controls: Used in motor drive applications requiring low on-resistance and high current handling.
- Inductive Loads: Effective in managing inductive loads with minimal switching losses.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the NTMS7N03R2G MOSFET?
The maximum drain-to-source voltage (VDSS) is 30 Vdc.
- What is the typical on-resistance (RDS(on)) of the NTMS7N03R2G?
The typical on-resistance (RDS(on)) is between 18.6 mΩ and 23.5 mΩ.
- What is the operating temperature range of the NTMS7N03R2G?
The operating and storage temperature range is -55°C to +150°C.
- What package type is the NTMS7N03R2G available in?
The NTMS7N03R2G is available in a SOIC-8 surface mount package.
- Is the NTMS7N03R2G Pb-Free?
Yes, the NTMS7N03R2G is a Pb-Free device.
- What are some typical applications of the NTMS7N03R2G?
Typical applications include DC-DC converters, power management, motor controls, and inductive loads.
- What is the maximum continuous drain current (ID) at 25°C?
The maximum continuous drain current (ID) at 25°C is 8.5 A.
- What is the gate threshold voltage (VGS(th)) range?
The gate threshold voltage (VGS(th)) range is between 1.0 V and 1.6 V.
- What is the thermal resistance, junction-to-ambient (RθJA), for the NTMS7N03R2G?
The thermal resistance, junction-to-ambient (RθJA), is 50 °C/W.
- What is the total power dissipation at 25°C?
The total power dissipation at 25°C is 2.5 W.
