NTHD3100CT1G
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onsemi NTHD3100CT1G

Manufacturer No:
NTHD3100CT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N/P-CH 20V CHIPFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTHD3100CT1G is a dual MOSFET array produced by onsemi, designed for high-performance applications. This component features a complementary pair of N and P channel MOSFETs, making it suitable for a variety of power management and switching tasks. The device is packaged in a surface mount ChipFET™ configuration, which enhances thermal performance and reduces the overall footprint on the PCB.

Key Specifications

ParameterValue
Channel TypeComplementary N and P Channel
Drain Source Voltage (Vds) - P Channel20V
Continuous Drain Current (Id) - P Channel3.9A
Continuous Drain Current (Id) - N Channel3.2A
Power Dissipation1.1W
Package TypeSurface Mount ChipFET™

Key Features

  • Complementary N and P channel MOSFETs for balanced performance.
  • High continuous drain current: 3.9A for P channel and 3.2A for N channel.
  • Low power dissipation of 1.1W.
  • Surface mount ChipFET™ package for improved thermal management and reduced PCB footprint.
  • Pb-Free packaging option available.

Applications

The NTHD3100CT1G is versatile and can be used in various applications, including power management circuits, DC-DC converters, motor control systems, and general-purpose switching. Its high current handling and low power dissipation make it particularly suitable for high-performance electronic devices.

Q & A

  1. What is the channel type of the NTHD3100CT1G? The NTHD3100CT1G features a complementary pair of N and P channel MOSFETs.
  2. What is the maximum drain source voltage for the P channel? The maximum drain source voltage for the P channel is 20V.
  3. What is the continuous drain current for the P channel? The continuous drain current for the P channel is 3.9A.
  4. What is the power dissipation of the NTHD3100CT1G? The power dissipation is 1.1W.
  5. What type of package does the NTHD3100CT1G use? The NTHD3100CT1G uses a surface mount ChipFET™ package.
  6. Is the NTHD3100CT1G Pb-Free? Yes, the NTHD3100CT1G is available in a Pb-Free packaging option.
  7. What are some common applications for the NTHD3100CT1G? Common applications include power management circuits, DC-DC converters, motor control systems, and general-purpose switching.
  8. Why is the ChipFET™ package beneficial? The ChipFET™ package enhances thermal performance and reduces the overall footprint on the PCB.
  9. What is the continuous drain current for the N channel? The continuous drain current for the N channel is 3.2A.
  10. Where can I find detailed specifications for the NTHD3100CT1G? Detailed specifications can be found on the official onsemi website, as well as on distributor websites such as Digi-Key, Farnell, and Octopart.

Product Attributes

FET Type:N and P-Channel
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:2.9A, 3.2A
Rds On (Max) @ Id, Vgs:80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id:1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:165pF @ 10V
Power - Max:1.1W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SMD, Flat Lead
Supplier Device Package:ChipFET™
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Same Series
NTHD3100CT1
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NTHD3100CT3
MOSFET N/P-CH 20V CHIPFET
NTHD3100CT3G
NTHD3100CT3G
MOSFET N/P-CH 20V CHIPFET

Similar Products

Part Number NTHD3100CT1G NTHD3102CT1G NTHD3100CT3G NTHD3100CT1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete
FET Type N and P-Channel N and P-Channel N and P-Channel N and P-Channel
FET Feature Logic Level Gate Logic Level Gate Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V 20V 20V
Current - Continuous Drain (Id) @ 25°C 2.9A, 3.2A 4A, 3.1A 2.9A, 3.2A 2.9A, 3.2A
Rds On (Max) @ Id, Vgs 80mOhm @ 2.9A, 4.5V 45mOhm @ 4.4A, 4.5V 80mOhm @ 2.9A, 4.5V 80mOhm @ 2.9A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 4.5V 7.9nC @ 4.5V 2.3nC @ 4.5V 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 165pF @ 10V 510pF @ 10V 165pF @ 10V 165pF @ 10V
Power - Max 1.1W 1.1W 1.1W 1.1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead 8-SMD, Flat Lead
Supplier Device Package ChipFET™ ChipFET™ ChipFET™ ChipFET™

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