NTGD3148NT1G
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onsemi NTGD3148NT1G

Manufacturer No:
NTGD3148NT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET 2N-CH 20V 3A 6TSOP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTGD3148NT1G is a dual N-channel MOSFET produced by onsemi. This component is designed for a variety of applications requiring high performance and reliability. It features two independent MOSFETs in a single TSOP6 package, making it ideal for space-constrained designs. The device operates with a drain-source voltage (Vds) of up to 20V and is capable of handling currents up to 2.2A per channel, with a total power dissipation of 0.9W per channel.

Key Specifications

Parameter Value
Package Type TSOP6
Channel Configuration Dual N-Channel
Drain-Source Voltage (Vds) 20V
Continuous Drain Current (Id) 2.2A per channel
Total Power Dissipation (Pd) 0.9W per channel
Country of Origin Malaysia

Key Features

  • Dual N-channel MOSFET in a single TSOP6 package, reducing board space requirements.
  • High drain-source voltage rating of 20V, suitable for a wide range of applications.
  • High continuous drain current of 2.2A per channel, ensuring robust performance.
  • Low total power dissipation of 0.9W per channel, enhancing thermal management.
  • Independent channels allow for flexible design configurations.

Applications

  • Power management and switching circuits.
  • Motor control and drive systems.
  • Audio and video equipment.
  • Industrial control systems.
  • Automotive electronics.

Q & A

  1. What is the package type of the NTGD3148NT1G? The NTGD3148NT1G is packaged in a TSOP6 package.
  2. What is the drain-source voltage rating of the NTGD3148NT1G? The drain-source voltage rating is 20V.
  3. What is the continuous drain current rating per channel? The continuous drain current rating is 2.2A per channel.
  4. What is the total power dissipation per channel? The total power dissipation is 0.9W per channel.
  5. Where is the NTGD3148NT1G manufactured? The NTGD3148NT1G is manufactured in Malaysia.
  6. What are the typical applications for the NTGD3148NT1G? Typical applications include power management, motor control, audio and video equipment, industrial control systems, and automotive electronics.
  7. Is the NTGD3148NT1G available in stock? Yes, the NTGD3148NT1G is available in stock from various distributors such as Mouser and Digi-Key.
  8. What is the configuration of the MOSFETs in the NTGD3148NT1G? The NTGD3148NT1G features two independent N-channel MOSFETs.
  9. What are the benefits of using a dual MOSFET in a single package? Using a dual MOSFET in a single package reduces board space requirements and enhances design flexibility.
  10. Where can I find detailed specifications and datasheets for the NTGD3148NT1G? Detailed specifications and datasheets can be found on the official onsemi website, as well as on distributor websites like Mouser and Digi-Key.

Product Attributes

FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):20V
Current - Continuous Drain (Id) @ 25°C:3A
Rds On (Max) @ Id, Vgs:70mOhm @ 3.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:300pF @ 10V
Power - Max:900mW
Operating Temperature:-50°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-23-6 Thin, TSOT-23-6
Supplier Device Package:6-TSOP
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