NTD3055AV1
  • Share:

onsemi NTD3055AV1

Manufacturer No:
NTD3055AV1
Manufacturer:
onsemi
Package:
Bulk
Description:
NFET DPAK 60V 0.15R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055AV1, produced by onsemi, is a power MOSFET designed for low voltage, high-speed switching applications. This N-Channel MOSFET is housed in a DPAK/IPAK package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it ideal for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS-20 to 20Vdc
Gate-to-Source Voltage - Non-repetitive (tp < 10 ms)VGS-30 to 30Vdc
Drain Current - Continuous @ TA = 25°CID9A
Static Drain-to-Source On-ResistanceRDS(on)122 to 150
Static Drain-to-Source On-VoltageVDS(on)1.1 to 1.4Vdc
Turn-On Delay Timetd(on)11.2 to 25ns
Turn-Off Delay Timetd(off)12.2 to 25ns
Gate ChargeQT7.1 to 15nC

Key Features

  • N-Channel MOSFET with a maximum drain current of 9 A and a maximum drain-to-source voltage of 60 V.
  • Designed for low voltage, high-speed switching applications.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • Low on-resistance (RDS(on)) and low on-voltage (VDS(on)).
  • Fast switching times with turn-on and turn-off delay times of 11.2 to 25 ns and 12.2 to 25 ns, respectively.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055AV1 MOSFET?
    The maximum drain-to-source voltage is 60 Vdc.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 9 A.
  3. Is the NTD3055AV1 MOSFET AEC-Q101 qualified?
    Yes, the NTD3055AV1 is AEC-Q101 qualified and PPAP capable.
  4. What are the typical applications of the NTD3055AV1 MOSFET?
    The typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. Is the NTD3055AV1 Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055AV1?
    The static drain-to-source on-resistance (RDS(on)) is 122 to 150 mΩ.
  7. What are the turn-on and turn-off delay times of the NTD3055AV1?
    The turn-on delay time is 11.2 to 25 ns, and the turn-off delay time is 12.2 to 25 ns.
  8. What is the gate charge (QT) of the NTD3055AV1?
    The gate charge (QT) is 7.1 to 15 nC.
  9. What is the forward on-voltage (VSD) of the source-drain diode?
    The forward on-voltage (VSD) is 0.98 to 1.20 Vdc.
  10. What is the reverse recovery time (trr) of the source-drain diode?
    The reverse recovery time (trr) is 28.9 ns.

Product Attributes

Transistor Type:- 
Frequency:- 
Gain:- 
Voltage - Test:- 
Current Rating (Amps):- 
Noise Figure:- 
Current - Test:- 
Power - Output:- 
Voltage - Rated:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
359

Please send RFQ , we will respond immediately.

Same Series
DD15S200V3S
DD15S200V3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV5S/AA
DD15S20LV5S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M2S5WV5Z/AA
DD26M2S5WV5Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LVLS/AA
DD15S20LVLS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S1S50T20
CBC47W1S1S50T20
CONN D-SUB RCPT 47POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200V30
DD26S200V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2F00X/AA
DD26S2F00X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20Z0S/AA
DD15S20Z0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC21W1S10HE2X/AA
CBC21W1S10HE2X/AA
CONN D-SUB RCPT 21POS CRIMP
DD44S32S500X
DD44S32S500X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WE2X/AA
DD26S20WE2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

BLF884P,112
BLF884P,112
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT1121A
BLL6H0514-25,112
BLL6H0514-25,112
Ampleon USA Inc.
RF FET LDMOS 100V 21DB SOT467C
CLF1G0035-100P
CLF1G0035-100P
NXP USA Inc.
RF SMALL SIGNAL FIELD-EFFECT TRA
BLF278C
BLF278C
Rochester Electronics, LLC
BLF278C - DUAL PUSH-PULL N-CHANN
BLF888DSU
BLF888DSU
Ampleon USA Inc.
RF FET LDMOS 104V 21DB SOT539B
BLF8G10LS-300PU
BLF8G10LS-300PU
Ampleon USA Inc.
RF FET LDMOS 65V 20.5DB SOT539B
SD2942W
SD2942W
STMicroelectronics
IC TRANS RF HF/VHF/UHF M244
SD4931
SD4931
STMicroelectronics
TRANSISTOR RF MOSFET N-CH M174
BLF8G20LS-220U
BLF8G20LS-220U
Ampleon USA Inc.
RF FET LDMOS 65V 18.9DB SOT502B
BLF6G10LS-135RN:11
BLF6G10LS-135RN:11
Ampleon USA Inc.
RF FET LDMOS 65V 21DB SOT502B
BLF6G20S-45,112
BLF6G20S-45,112
Ampleon USA Inc.
RF FET LDMOS 65V 19.2DB SOT608B
BLP7G22-10,135
BLP7G22-10,135
NXP USA Inc.
TRANSISTOR DRIVER LDMOS 12HVSON

Related Product By Brand

NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
NIS5420MT4TXG
NIS5420MT4TXG
onsemi
ELECTRONIC FUSE (EFUSE), 12V, 44
NCP303160MNTWG
NCP303160MNTWG
onsemi
INTEGRATED DRIVER & MOSFFET
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
LB1936V-TLM-E
LB1936V-TLM-E
onsemi
IC MTR DRV BIPLR 2.5-9.5V 16SSOP
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV4299D2
NCV4299D2
onsemi
IC REG LINEAR 5V 150MA 14SOIC