NTD3055AV1
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onsemi NTD3055AV1

Manufacturer No:
NTD3055AV1
Manufacturer:
onsemi
Package:
Bulk
Description:
NFET DPAK 60V 0.15R
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD3055AV1, produced by onsemi, is a power MOSFET designed for low voltage, high-speed switching applications. This N-Channel MOSFET is housed in a DPAK/IPAK package and is suitable for use in power supplies, converters, power motor controls, and bridge circuits. It is AEC-Q101 qualified and PPAP capable, making it ideal for automotive and other applications requiring unique site and control change requirements. The device is Pb-free and RoHS compliant, ensuring environmental sustainability.

Key Specifications

RatingSymbolValueUnit
Drain-to-Source VoltageVDSS60Vdc
Drain-to-Gate VoltageVDGR60Vdc
Gate-to-Source Voltage - ContinuousVGS-20 to 20Vdc
Gate-to-Source Voltage - Non-repetitive (tp < 10 ms)VGS-30 to 30Vdc
Drain Current - Continuous @ TA = 25°CID9A
Static Drain-to-Source On-ResistanceRDS(on)122 to 150
Static Drain-to-Source On-VoltageVDS(on)1.1 to 1.4Vdc
Turn-On Delay Timetd(on)11.2 to 25ns
Turn-Off Delay Timetd(off)12.2 to 25ns
Gate ChargeQT7.1 to 15nC

Key Features

  • N-Channel MOSFET with a maximum drain current of 9 A and a maximum drain-to-source voltage of 60 V.
  • Designed for low voltage, high-speed switching applications.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free and RoHS compliant.
  • Low on-resistance (RDS(on)) and low on-voltage (VDS(on)).
  • Fast switching times with turn-on and turn-off delay times of 11.2 to 25 ns and 12.2 to 25 ns, respectively.

Applications

  • Power Supplies
  • Converters
  • Power Motor Controls
  • Bridge Circuits

Q & A

  1. What is the maximum drain-to-source voltage of the NTD3055AV1 MOSFET?
    The maximum drain-to-source voltage is 60 Vdc.
  2. What is the maximum continuous drain current at 25°C?
    The maximum continuous drain current at 25°C is 9 A.
  3. Is the NTD3055AV1 MOSFET AEC-Q101 qualified?
    Yes, the NTD3055AV1 is AEC-Q101 qualified and PPAP capable.
  4. What are the typical applications of the NTD3055AV1 MOSFET?
    The typical applications include power supplies, converters, power motor controls, and bridge circuits.
  5. Is the NTD3055AV1 Pb-free and RoHS compliant?
    Yes, the device is Pb-free and RoHS compliant.
  6. What is the static drain-to-source on-resistance (RDS(on)) of the NTD3055AV1?
    The static drain-to-source on-resistance (RDS(on)) is 122 to 150 mΩ.
  7. What are the turn-on and turn-off delay times of the NTD3055AV1?
    The turn-on delay time is 11.2 to 25 ns, and the turn-off delay time is 12.2 to 25 ns.
  8. What is the gate charge (QT) of the NTD3055AV1?
    The gate charge (QT) is 7.1 to 15 nC.
  9. What is the forward on-voltage (VSD) of the source-drain diode?
    The forward on-voltage (VSD) is 0.98 to 1.20 Vdc.
  10. What is the reverse recovery time (trr) of the source-drain diode?
    The reverse recovery time (trr) is 28.9 ns.

Product Attributes

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