NSVBAS21HT3G
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onsemi NSVBAS21HT3G

Manufacturer No:
NSVBAS21HT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 250V 200MA SOD323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NSVBAS21HT3G is a high voltage switching diode produced by onsemi. This device is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and compliance with automotive standards. The diode is also Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly.

Key Specifications

Rating Symbol Value Unit
Continuous Reverse Voltage VR 250 Vdc
Repetitive Peak Reverse Voltage VRRM 250 Vdc
Peak Forward Current IF 200 mAdc
Repetitive Peak Forward Current IFRM 500 mA
Non-Repetitive Peak Forward Surge Current, 60 Hz IFSM(surge) 2.5 A
Non-Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) IFSM 20 A (t = 1 μs), 10 A (t = 10 μs), 4 A (t = 1 ms), 1 A (t = 1 s) A
Reverse Voltage Leakage Current (VR = 200 Vdc) IR 0.1 μAdc μAdc
Forward Voltage (IF = 100 mAdc) VF 1000 mV mV
Diode Capacitance (VR = 0, f = 1.0 MHz) CD 5.0 pF pF
Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 Ω) trr 50 ns ns
Thermal Resistance, Junction-to-Ambient RθJA 635 °C/W °C/W
Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C °C

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
  • High continuous reverse voltage (VR) and repetitive peak reverse voltage (VRRM) of 250 Vdc.
  • Peak forward current (IF) of 200 mA and repetitive peak forward current (IFRM) of 500 mA.
  • Low reverse recovery time (trr) of 50 ns, enhancing switching performance.
  • Wide junction and storage temperature range from −55°C to +150°C.

Applications

  • Automotive systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Power supplies: Used in high-voltage power supply circuits where fast switching and low leakage are critical.
  • Rectifier circuits: Ideal for rectification in high-voltage DC power supplies.
  • Switching circuits: Employed in switching circuits that require fast recovery times and high voltage handling.
  • General-purpose high-voltage applications: Applicable in any high-voltage application requiring reliable and efficient diode performance.

Q & A

  1. What is the continuous reverse voltage rating of the NSVBAS21HT3G diode?

    The continuous reverse voltage rating is 250 Vdc.

  2. Is the NSVBAS21HT3G diode RoHS compliant?
  3. What is the peak forward current rating of the NSVBAS21HT3G diode?

    The peak forward current rating is 200 mA.

  4. What is the reverse recovery time of the NSVBAS21HT3G diode?

    The reverse recovery time is 50 ns.

  5. What is the junction and storage temperature range for the NSVBAS21HT3G diode?

    The junction and storage temperature range is from −55°C to +150°C.

  6. Is the NSVBAS21HT3G diode suitable for automotive applications?
  7. What is the thermal resistance, junction-to-ambient, of the NSVBAS21HT3G diode?

    The thermal resistance, junction-to-ambient, is 635 °C/W.

  8. What is the maximum non-repetitive peak forward surge current for the NSVBAS21HT3G diode?

    The maximum non-repetitive peak forward surge current varies with pulse duration but can be up to 2.5 A for a 60 Hz surge.

  9. What package type is the NSVBAS21HT3G diode available in?

    The diode is available in the SOD-323 package.

  10. How many devices are shipped per reel for the NSVBAS21HT3G diode?

    10,000 devices are shipped per reel.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):250 V
Current - Average Rectified (Io):200mA (DC)
Voltage - Forward (Vf) (Max) @ If:1.25 V @ 200 mA
Speed:Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr):50 ns
Current - Reverse Leakage @ Vr:100 nA @ 200 V
Capacitance @ Vr, F:5pF @ 0V, 1MHz
Mounting Type:Surface Mount
Package / Case:SC-76, SOD-323
Supplier Device Package:SOD-323
Operating Temperature - Junction:-55°C ~ 150°C
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Same Series
BAS21HT1G
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DIODE GEN PURP 250V 200MA SOD323
BAS21HT3G
BAS21HT3G
DIODE GEN PURP 250V 200MA SOD323
NSVBAS21HT3G
NSVBAS21HT3G
DIODE GEN PURP 250V 200MA SOD323

Similar Products

Part Number NSVBAS21HT3G NSVBAS21HT1G
Manufacturer onsemi onsemi
Product Status Active Active
Diode Type Standard Standard
Voltage - DC Reverse (Vr) (Max) 250 V 250 V
Current - Average Rectified (Io) 200mA (DC) 200mA (DC)
Voltage - Forward (Vf) (Max) @ If 1.25 V @ 200 mA 1.25 V @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr) 50 ns 50 ns
Current - Reverse Leakage @ Vr 100 nA @ 200 V 100 nA @ 200 V
Capacitance @ Vr, F 5pF @ 0V, 1MHz 5pF @ 0V, 1MHz
Mounting Type Surface Mount Surface Mount
Package / Case SC-76, SOD-323 SC-76, SOD-323
Supplier Device Package SOD-323 SOD-323
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C

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