Overview
The NSS35200MR6T1G is a 35 V, 5 A, low VCE(sat) PNP transistor from ON Semiconductor's e2PowerEdge family. This miniature surface mount device is designed for low voltage, high speed switching applications, offering ultra-low saturation voltage (VCE(sat)) and high current gain capability. It is particularly suited for efficient energy control in various electronic devices.
Key Specifications
| Characteristic | Symbol | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | -35 | Vdc |
| Collector-Base Voltage | VCBO | - | - | -55 | Vdc |
| Emitter-Base Voltage | VEBO | - | - | -5.0 | Vdc |
| Collector Current - Continuous | IC | - | - | -2.0 | Adc |
| Collector Current - Peak | ICM | - | - | -5.0 | A |
| DC Current Gain (hFE) | hFE | 100 | 200 | 400 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | VCE(sat) | -0.125 | -0.175 | -0.260 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | VBE(sat) | -0.68 | -0.85 | - | V |
| Cutoff Frequency (fT) | fT | - | 100 | - | MHz |
| Input Capacitance (Cibo) | Cibo | - | 600 | 650 | pF |
| Output Capacitance (Cobo) | Cobo | - | 85 | 100 | pF |
| Turn-on Time (ton) | ton | - | 35 | - | nS |
| Turn-off Time (toff) | toff | - | 225 | - | nS |
Key Features
- Ultra-low saturation voltage (VCE(sat)) for efficient energy control.
- High current gain capability.
- Designed for low voltage, high speed switching applications.
- Pb-free and RoHS compliant.
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications.
- High linear gain (Beta) making it ideal for analog amplifiers.
- Direct drive capability from PMU’s control outputs.
Applications
- DC-DC converters and power management in portable and battery-powered products such as cellular and cordless phones, PDAs, computers, printers, digital cameras, and MP3 players.
- Low voltage motor controls in mass storage products like disc drives and tape drives.
- Automotive applications including air bag deployment and instrument clusters.
- Analog amplifiers due to its high linear gain.
Q & A
- What is the maximum collector-emitter voltage of the NSS35200MR6T1G transistor?
The maximum collector-emitter voltage (VCEO) is -35 Vdc.
- What is the typical DC current gain (hFE) of this transistor?
The typical DC current gain (hFE) is 200.
- What is the collector-emitter saturation voltage (VCE(sat)) at a collector current of 2.0 A?
The collector-emitter saturation voltage (VCE(sat)) at a collector current of 2.0 A is typically -0.260 V.
- Is the NSS35200MR6T1G transistor Pb-free and RoHS compliant?
- What are some common applications of the NSS35200MR6T1G transistor?
- What is the cutoff frequency (fT) of the NSS35200MR6T1G transistor?
- What is the turn-on time (ton) and turn-off time (toff) of the transistor?
- Is the NSS35200MR6T1G transistor suitable for automotive applications?
- What is the package type of the NSS35200MR6T1G transistor?
- What is the thermal resistance (RJA) of the NSS35200MR6T1G transistor?
