Overview
The NJVNJD2873T4G-VF01 is a high-performance NPN single bipolar transistor designed and manufactured by onsemi. This device is engineered to deliver exceptional performance in various electronic applications, particularly in high-gain audio amplifier applications. It features a surface-mount DPAK package, ensuring easy integration into modern electronic designs. Although the NJVNJD2873T4G-VF01 is now considered obsolete, it remains a reliable choice for legacy systems or specific applications where this model is still required.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 50 | Vdc |
| Collector-Emitter Voltage | VCEO | 50 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current - Continuous | IC | 2 | Adc |
| Collector Current - Peak | ICM | 3 | Adc |
| Base Current | IB | 0.4 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 15 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +175 | °C |
| DC Current Gain (IC = 0.5 A, VCE = 2 V) | hFE | 120 - 360 | - |
| Collector-Emitter Saturation Voltage (IC = 1 A, IB = 0.05 A) | VCE(sat) | 0.3 | Vdc |
| Base-Emitter Saturation Voltage (IC = 1 A, IB = 0.05 A) | VBE(sat) | 1.2 | Vdc |
Key Features
- High DC Current Gain: The transistor offers a high DC current gain, making it suitable for high-gain audio amplifier applications.
- Low Collector-Emitter Saturation Voltage: It features a low collector-emitter saturation voltage, which enhances its efficiency in power handling.
- High Current-Gain - Bandwidth Product: This transistor has a high current-gain - bandwidth product, indicating its capability for high-frequency applications.
- Environmental Compliance: The device is Pb-free, halogen-free/BFR-free, and RoHS compliant, ensuring it meets environmental standards.
- AEC-Q101 Qualified and PPAP Capable: It is qualified to AEC-Q101 standards and is PPAP capable, making it reliable for automotive and other critical applications.
- Surface Mount DPAK Package: The transistor is packaged in a surface-mount DPAK package, facilitating easy integration into modern electronic designs.
Applications
- High-Gain Audio Amplifiers: The NJVNJD2873T4G-VF01 is specifically designed for high-gain audio amplifier applications, where its high DC current gain and low saturation voltage are particularly beneficial.
- Automotive Systems: Given its AEC-Q101 qualification and PPAP capability, this transistor is suitable for use in automotive systems where reliability and performance are critical.
- Legacy Systems: Although the transistor is now obsolete, it remains a reliable choice for legacy systems or applications where this specific model is still required.
Q & A
- What is the maximum collector current of the NJVNJD2873T4G-VF01 transistor?
The maximum collector current is 2 A.
- What is the collector-emitter breakdown voltage of this transistor?
The collector-emitter breakdown voltage is 50 V.
- What package type does the NJVNJD2873T4G-VF01 use?
The transistor is packaged in a surface-mount DPAK package.
- Is the NJVNJD2873T4G-VF01 environmentally compliant?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are the typical applications of the NJVNJD2873T4G-VF01 transistor?
It is typically used in high-gain audio amplifier applications and automotive systems.
- Is the NJVNJD2873T4G-VF01 still in production?
No, the NJVNJD2873T4G-VF01 is now considered obsolete.
- What is the DC current gain of the NJVNJD2873T4G-VF01 transistor?
The DC current gain ranges from 120 to 360.
- What is the collector-emitter saturation voltage of this transistor?
The collector-emitter saturation voltage is 0.3 Vdc.
- Is the NJVNJD2873T4G-VF01 AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the operating temperature range of the NJVNJD2873T4G-VF01 transistor?
The operating and storage junction temperature range is -65 to +175°C.
