Overview
The NJVMJD243T4G is a complementary silicon plastic power transistor produced by onsemi. This device is part of the MJD243 series, which includes both NPN (MJD243) and PNP (MJD253) types. The NJVMJD243T4G is specifically designed for low voltage, low-power, high-gain audio amplifier applications and is suitable for surface mount installations.
It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. The device is lead-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage | VCB | 100 | Vdc |
| Collector-Emitter Voltage | VCEO | 100 | Vdc |
| Emitter-Base Voltage | VEB | 7.0 | Vdc |
| Collector Current - Continuous | IC | 4.0 | Adc |
| Collector Current - Peak | ICM | 8.0 | Adc |
| Base Current | IB | 1.0 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 12.5 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| ESD - Human Body Model | HBM | 3B V | |
| DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) | hFE | 40 - 180 | |
| Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) | VCE(sat) | 0.3 - 0.6 | Vdc |
| Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) | VBE(sat) | 1.8 | Vdc |
| Current-Gain - Bandwidth Product (IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz) | fT | 40 | MHz |
Key Features
- High DC Current Gain
- Lead Formed for Surface Mount Applications in Plastic Sleeves
- Straight Lead Version in Plastic Sleeves (“−1” Suffix)
- Low Collector-Emitter Saturation Voltage
- High Current-Gain - Bandwidth Product
- Annular Construction for Low Leakage
- Epoxy Meets UL 94 V-0 @ 0.125 in
- AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
The NJVMJD243T4G is designed for low voltage, low-power, high-gain audio amplifier applications. It is also suitable for various other applications including:
- Automotive systems requiring high reliability and compliance with automotive standards
- Surface mount installations in electronic devices
- General-purpose amplifier circuits
- Switching and linear amplifier applications
Q & A
- What is the maximum collector-emitter voltage for the NJVMJD243T4G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is 4.0 Adc.
- Is the NJVMJD243T4G RoHS compliant?
- What is the operating junction temperature range for this device?
The operating and storage junction temperature range is -65 to +150 °C.
- What is the DC current gain for the NJVMJD243T4G?
The DC current gain (hFE) ranges from 40 to 180 at IC = 200 mAdc and VCE = 1.0 Vdc.
- Is the NJVMJD243T4G suitable for automotive applications?
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is between 0.3 to 0.6 Vdc at IC = 1.0 Adc and IB = 100 mAdc.
- What is the current-gain-bandwidth product of the NJVMJD243T4G?
The current-gain-bandwidth product (fT) is 40 MHz at IC = 100 mAdc, VCE = 10 Vdc, and ftest = 10 MHz.
- What type of package does the NJVMJD243T4G come in?
The NJVMJD243T4G comes in a DPAK-3 package, which is Pb-Free and suitable for surface mount applications.
- What are the thermal characteristics of the NJVMJD243T4G?
The thermal resistance junction-to-case (RJC) and junction-to-ambient (RJA) are specified in the datasheet, with derating above 25°C.
