Overview
The onsemi MJD243T4G is a high-performance NPN bipolar power transistor designed for various applications requiring low voltage, low power, and high gain. This transistor is part of the MJD series and is housed in a TO-252-3 (DPAK) package, making it suitable for surface mount applications. It is particularly well-suited for audio amplifier applications due to its high DC current gain and low collector-emitter saturation voltage.
Key Specifications
| Attribute | Value | Unit |
|---|---|---|
| Polarity | NPN | |
| Type | Power Transistor | |
| Maximum Collector-Emitter Voltage | 100 | V |
| Maximum DC Collector Current | 4 | A |
| Maximum Power Dissipation | 1.4 | W |
| Minimum DC Current Gain | 40 | |
| Package Type | TO-252-3 (DPAK) | |
| Mounting Type | Surface Mount | |
| Maximum Collector-Base Voltage | 100 | Vdc |
| Maximum Emitter-Base Voltage | 7 | V |
| Maximum Operating Frequency | 10 | MHz |
| Pin Count | 3 | |
| Maximum Operating Temperature | +150 | °C |
| Dimensions | 6.73 x 6.22 x 2.38 mm |
Key Features
- High DC Current Gain: Minimum DC current gain of 40 at 200 mA and 1 V, making it suitable for high-gain applications.
- Low Collector-Emitter Saturation Voltage: Maximum VCE(sat) of 0.3 Vdc at 500 mA and 0.6 Vdc at 1 A, ensuring low power loss.
- High Current-Gain-Bandwidth Product: fT of 40 MHz at 100 mA, indicating good high-frequency performance.
- Annular Construction: Designed for low leakage, with ICBO of 100 nAdc at rated VCB.
- Pb-Free and RoHS Compliant: The transistor is lead-free, halogen-free, and BFR-free, making it environmentally friendly.
- AEC-Q101 Qualified: For automotive and other applications requiring unique site and control change requirements.
Applications
- Audio Amplifiers: The MJD243T4G is particularly suited for low voltage, low power, high gain audio amplifier applications due to its high DC current gain and low collector-emitter saturation voltage.
- Automotive Systems: Qualified to AEC-Q101 standard, making it suitable for automotive and other demanding applications.
- General Power Switching: Can be used in various power switching applications requiring high current and voltage handling capabilities.
Q & A
- What is the maximum collector-emitter voltage of the MJD243T4G transistor?
The maximum collector-emitter voltage is 100 V.
- What is the maximum DC collector current of the MJD243T4G transistor?
The maximum DC collector current is 4 A.
- What is the package type of the MJD243T4G transistor?
The package type is TO-252-3 (DPAK).
- What is the minimum DC current gain of the MJD243T4G transistor?
The minimum DC current gain is 40 at 200 mA and 1 V.
- Is the MJD243T4G transistor RoHS compliant?
Yes, the transistor is Pb-free, halogen-free, and BFR-free, making it RoHS compliant.
- What is the maximum operating temperature of the MJD243T4G transistor?
The maximum operating temperature is +150 °C.
- What are the dimensions of the MJD243T4G transistor?
The dimensions are 6.73 x 6.22 x 2.38 mm.
- Is the MJD243T4G transistor suitable for automotive applications?
Yes, it is qualified to AEC-Q101 standard, making it suitable for automotive and other demanding applications.
- What is the maximum collector-base voltage of the MJD243T4G transistor?
The maximum collector-base voltage is 100 Vdc.
- What is the maximum emitter-base voltage of the MJD243T4G transistor?
The maximum emitter-base voltage is 7 V.
