Overview
The MJD253T4G is a PNP complementary silicon plastic power transistor produced by onsemi. This device is designed for low voltage, low-power, high-gain audio amplifier applications. It is part of the MJD253 series, which includes the MJD253T4G model specifically packaged in a DPAK-3 (Pb-Free) case. The transistor is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Max | Unit |
|---|---|---|---|---|
| Collector-Base Voltage | VCB | - | 100 | Vdc |
| Collector-Emitter Voltage | VCEO | - | 100 | Vdc |
| Emitter-Base Voltage | VEB | - | 7.0 | Vdc |
| Collector Current - Continuous | IC | - | 4.0 | Adc |
| Collector Current - Peak | ICM | - | 8.0 | Adc |
| Base Current | IB | - | 1.0 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | - | 12.5 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 | +150 | °C |
| DC Current Gain (IC = 200 mAdc, VCE = 1.0 Vdc) | hFE | 40 | 180 | - |
| Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 100 mAdc) | VCE(sat) | - | 0.6 | Vdc |
| Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 200 mAdc) | VBE(sat) | - | 1.8 | Vdc |
Key Features
- High DC Current Gain
- Lead Formed for Surface Mount Applications in Plastic Sleeves
- Low Collector-Emitter Saturation Voltage
- High Current-Gain - Bandwidth Product
- Annular Construction for Low Leakage
- Epoxy Meets UL 94 V-0 @ 0.125 in
- AEC-Q101 Qualified and PPAP Capable for Automotive and Other Applications
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
Applications
The MJD253T4G is designed for low voltage, low-power, high-gain audio amplifier applications. It is also suitable for various other applications including:
- Automotive systems requiring high reliability and specific control change requirements
- General-purpose power amplification
- Switching applications where high current gain and low saturation voltage are necessary
Q & A
- What is the maximum collector-emitter voltage for the MJD253T4G?
The maximum collector-emitter voltage (VCEO) is 100 Vdc.
- What is the continuous collector current rating for this transistor?
The continuous collector current (IC) is rated at 4.0 Adc.
- Is the MJD253T4G suitable for automotive applications?
- What is the operating junction temperature range for this device?
The operating and storage junction temperature range is -65°C to +150°C.
- What is the DC current gain of the MJD253T4G?
The DC current gain (hFE) ranges from 40 to 180 at IC = 200 mAdc and VCE = 1.0 Vdc.
- Is the MJD253T4G Pb-Free and RoHS compliant?
- What is the collector-emitter saturation voltage for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.6 Vdc at IC = 1.0 Adc and IB = 100 mAdc.
- What is the base-emitter saturation voltage for the MJD253T4G?
The base-emitter saturation voltage (VBE(sat)) is up to 1.8 Vdc at IC = 2.0 Adc and IB = 200 mAdc.
- What package type is the MJD253T4G available in?
The MJD253T4G is available in a DPAK-3 (Pb-Free) package.
- What are the thermal characteristics of the MJD253T4G?
The thermal resistance junction-to-case (RJC) and junction-to-ambient (RJA) are specified in the datasheet, with derating above 25°C.
