Overview
The MSD42WT1G is an NPN high voltage transistor manufactured by onsemi. This device is designed for general-purpose amplifier applications and is housed in the SC-70/SOT-323 package, suitable for low power surface mount applications. The transistor is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly. The NSV prefix indicates that it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
Key Specifications
| Symbol | Characteristic | Min | Max | Unit |
|---|---|---|---|---|
| V(BR)CBO | Collector-Base Breakdown Voltage | 300 | - | V |
| V(BR)CEO | Collector-Emitter Breakdown Voltage | 300 | - | V |
| V(BR)EBO | Emitter-Base Breakdown Voltage | 6.0 | - | V |
| IC | Collector Current - Continuous | - | 150 | mA |
| PD | Power Dissipation | - | 450 | mW |
| RJA | Thermal Resistance, Junction-to-Ambient | - | 274 | °C/W |
| TJ, Tstg | Junction and Storage Temperature Range | -55 | +150 | °C |
| hFE1 | DC Current Gain (VCE = 10 V, IC = 1.0 mA) | 25 | - | - |
| hFE2 | DC Current Gain (VCE = 10 V, IC = 30 mA) | 40 | - | - |
| VCE(sat) | Collector-Emitter Saturation Voltage (IC = 20 mA, IB = 2.0 mA) | - | 0.5 | V |
Key Features
- Pb-free, halogen-free, and RoHS compliant
- AEC-Q101 qualified and PPAP capable for automotive and other critical applications
- Housed in SC-70/SOT-323 package for low power surface mount applications
- High collector-base, collector-emitter, and emitter-base breakdown voltages
- Low collector-emitter saturation voltage
- Wide junction and storage temperature range (-55°C to +150°C)
Applications
- General-purpose amplifier applications
- Automotive systems requiring AEC-Q101 qualification
- Other applications needing unique site and control change requirements
- Low power surface mount designs
Q & A
- What is the maximum collector-emitter voltage of the MSD42WT1G transistor?
The maximum collector-emitter voltage (V(BR)CEO) is 300 V.
- What is the continuous collector current rating of the MSD42WT1G?
The continuous collector current (IC) is 150 mA.
- Is the MSD42WT1G RoHS compliant?
Yes, the MSD42WT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance of the MSD42WT1G from junction to ambient?
The thermal resistance (RJA) is 274 °C/W.
- What is the DC current gain of the MSD42WT1G at IC = 1.0 mA and VCE = 10 V?
The DC current gain (hFE1) at IC = 1.0 mA and VCE = 10 V is 25.
- What is the collector-emitter saturation voltage of the MSD42WT1G at IC = 20 mA and IB = 2.0 mA?
The collector-emitter saturation voltage (VCE(sat)) at IC = 20 mA and IB = 2.0 mA is 0.5 V.
- What is the junction and storage temperature range of the MSD42WT1G?
The junction and storage temperature range (TJ, Tstg) is -55°C to +150°C.
- Is the MSD42WT1G suitable for automotive applications?
Yes, the MSD42WT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- What package type is the MSD42WT1G housed in?
The MSD42WT1G is housed in the SC-70/SOT-323 package.
- What is the power dissipation rating of the MSD42WT1G?
The power dissipation (PD) rating is 450 mW.
