MRA4006T3G
  • Share:

onsemi MRA4006T3G

Manufacturer No:
MRA4006T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 800V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRA4006T3G is a standard recovery power rectifier produced by onsemi. This component is designed for surface mount applications and features a compact SMA (DO-214AC) package with J-bend leads, ideal for automated handling. It is constructed with a stable, high-temperature, glass-passivated junction, making it suitable for various high-reliability applications, including automotive and industrial uses.

Key Specifications

ParameterValueUnit
Maximum Average Rectified Current1A
Peak Reverse Voltage800V
Forward Voltage Drop at 2A1.18V
Surge Current Capability230A
Reverse Leakage Current0.37μA
Package TypeSMA (DO-214AC)
Weight70mg
Lead and Mounting Surface Temperature for Soldering260°C Max. for 10 seconds

Key Features

  • Compact SMA (DO-214AC) package with J-bend leads, ideal for automated handling and surface mount applications.
  • Stable, high-temperature, glass-passivated junction for reliable operation in various environments.
  • High surge current capability of up to 230A and low reverse leakage current of 0.37μA.
  • Corrosion-resistant finish on all external surfaces and readily solderable terminal leads.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

Applications

The MRA4006T3G is ideally suited for a variety of applications, including:

  • Surface mounted automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial power supplies and rectifier circuits where high reliability and efficiency are required.
  • General-purpose rectification in electronic devices where compact packaging and high surge current handling are necessary.

Q & A

  1. What is the maximum average rectified current of the MRA4006T3G?
    The maximum average rectified current is 1 A.
  2. What is the peak reverse voltage of the MRA4006T3G?
    The peak reverse voltage is 800 V.
  3. What is the forward voltage drop at 2A for the MRA4006T3G?
    The forward voltage drop at 2A is 1.18 V.
  4. What is the surge current capability of the MRA4006T3G?
    The surge current capability is up to 230 A.
  5. What is the reverse leakage current of the MRA4006T3G?
    The reverse leakage current is 0.37 μA.
  6. What package type does the MRA4006T3G use?
    The MRA4006T3G uses an SMA (DO-214AC) package.
  7. Is the MRA4006T3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  8. What is the weight of the MRA4006T3G?
    The weight is approximately 70 mg.
  9. What is the maximum lead and mounting surface temperature for soldering?
    The maximum lead and mounting surface temperature for soldering is 260°C for 10 seconds.
  10. Is the MRA4006T3G corrosion-resistant?
    Yes, all external surfaces are corrosion-resistant, and the terminal leads are readily solderable.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.40
2,085

Please send RFQ , we will respond immediately.

Same Series
MRA4004T3G
MRA4004T3G
DIODE GEN PURP 400V 1A SMA
MRA4007T3G
MRA4007T3G
DIODE GEN PURP 1000V 1A SMA
MRA4006T3G
MRA4006T3G
DIODE GEN PURP 800V 1A SMA
NRVA4004T3G
NRVA4004T3G
DIODE GEN PURP 400V 1A SMA
NRVA4007T3G
NRVA4007T3G
DIODE GEN PURP 1000V 1A SMA
NRVA4006T3G
NRVA4006T3G
DIODE GEN PURP 800V 1A SMA
MRA4005T3G
MRA4005T3G
DIODE GEN PURP 600V 1A SMA
NRVA4005T3G
NRVA4005T3G
DIODE GEN PURP 600V 1A SMA
NRVA4003T3G
NRVA4003T3G
DIODE GEN PURP 1A 300V SMA
MRA4005T3
MRA4005T3
DIODE GEN PURP 600V 1A SMA
MRA4006T3
MRA4006T3
DIODE GEN PURP 800V 1A SMA
MRA4004T3
MRA4004T3
DIODE GEN PURP 400V 1A SMA

Similar Products

Part Number MRA4006T3G MRA4007T3G MRA4003T3G MRA4004T3G MRA4005T3G MRA4006T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 300 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 1000 V 10 µA @ 300 V 10 µA @ 400 V 10 µA @ 600 V 10 µA @ 800 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
STPS2150A
STPS2150A
STMicroelectronics
DIODE SCHOTTKY 150V 2A SMA
BAT54TS_R1_00001
BAT54TS_R1_00001
Panjit International Inc.
SOD-523, SKY
BAS16-E3-08
BAS16-E3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 75V 150MA SOT23
SBAT54XV2T1G
SBAT54XV2T1G
onsemi
DIODE SCHOTTKY 30V 200MA SOD523
PMEG2020EH,115
PMEG2020EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 2A SOD123F
PMEG4020EP-QX
PMEG4020EP-QX
Nexperia USA Inc.
SCHOTTKYS IN CFP PACKAGES
1N4148TR_S00Z
1N4148TR_S00Z
onsemi
DIODE GEN PURP 100V 200MA DO35
BAT54_ND87Z
BAT54_ND87Z
onsemi
DIODE SCHOTTKY 30V 200MA SOT23-3
1N5821HA0G
1N5821HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 3A DO201AD
BAS321-QX
BAS321-QX
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP
MUR420S R6
MUR420S R6
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO214AB

Related Product By Brand

BZX55C18_T50A
BZX55C18_T50A
onsemi
DIODE ZENER 18V 500MW DO35
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
NS5B1G385DTT1G
NS5B1G385DTT1G
onsemi
IC ANLG SWITCH SPST NO 5TSOP
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223