MRA4006T3G
  • Share:

onsemi MRA4006T3G

Manufacturer No:
MRA4006T3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 800V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRA4006T3G is a standard recovery power rectifier produced by onsemi. This component is designed for surface mount applications and features a compact SMA (DO-214AC) package with J-bend leads, ideal for automated handling. It is constructed with a stable, high-temperature, glass-passivated junction, making it suitable for various high-reliability applications, including automotive and industrial uses.

Key Specifications

ParameterValueUnit
Maximum Average Rectified Current1A
Peak Reverse Voltage800V
Forward Voltage Drop at 2A1.18V
Surge Current Capability230A
Reverse Leakage Current0.37μA
Package TypeSMA (DO-214AC)
Weight70mg
Lead and Mounting Surface Temperature for Soldering260°C Max. for 10 seconds

Key Features

  • Compact SMA (DO-214AC) package with J-bend leads, ideal for automated handling and surface mount applications.
  • Stable, high-temperature, glass-passivated junction for reliable operation in various environments.
  • High surge current capability of up to 230A and low reverse leakage current of 0.37μA.
  • Corrosion-resistant finish on all external surfaces and readily solderable terminal leads.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.

Applications

The MRA4006T3G is ideally suited for a variety of applications, including:

  • Surface mounted automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial power supplies and rectifier circuits where high reliability and efficiency are required.
  • General-purpose rectification in electronic devices where compact packaging and high surge current handling are necessary.

Q & A

  1. What is the maximum average rectified current of the MRA4006T3G?
    The maximum average rectified current is 1 A.
  2. What is the peak reverse voltage of the MRA4006T3G?
    The peak reverse voltage is 800 V.
  3. What is the forward voltage drop at 2A for the MRA4006T3G?
    The forward voltage drop at 2A is 1.18 V.
  4. What is the surge current capability of the MRA4006T3G?
    The surge current capability is up to 230 A.
  5. What is the reverse leakage current of the MRA4006T3G?
    The reverse leakage current is 0.37 μA.
  6. What package type does the MRA4006T3G use?
    The MRA4006T3G uses an SMA (DO-214AC) package.
  7. Is the MRA4006T3G suitable for automotive applications?
    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other high-reliability applications.
  8. What is the weight of the MRA4006T3G?
    The weight is approximately 70 mg.
  9. What is the maximum lead and mounting surface temperature for soldering?
    The maximum lead and mounting surface temperature for soldering is 260°C for 10 seconds.
  10. Is the MRA4006T3G corrosion-resistant?
    Yes, all external surfaces are corrosion-resistant, and the terminal leads are readily solderable.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):800 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 800 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

$0.40
2,085

Please send RFQ , we will respond immediately.

Same Series
MRA4004T3G
MRA4004T3G
DIODE GEN PURP 400V 1A SMA
MRA4006T3G
MRA4006T3G
DIODE GEN PURP 800V 1A SMA
MRA4005T1G
MRA4005T1G
DIODE GEN PURP 600V 1A SMA
NRVA4004T3G
NRVA4004T3G
DIODE GEN PURP 400V 1A SMA
NRVA4007T3G
NRVA4007T3G
DIODE GEN PURP 1000V 1A SMA
NRVA4006T3G
NRVA4006T3G
DIODE GEN PURP 800V 1A SMA
MRA4005T3G
MRA4005T3G
DIODE GEN PURP 600V 1A SMA
NRVA4005T3G
NRVA4005T3G
DIODE GEN PURP 600V 1A SMA
NRVA4003T3G
NRVA4003T3G
DIODE GEN PURP 1A 300V SMA
MRA4005T3
MRA4005T3
DIODE GEN PURP 600V 1A SMA
MRA4006T3
MRA4006T3
DIODE GEN PURP 800V 1A SMA
MRA4003T3
MRA4003T3
DIODE GEN PURP 300V 1A SMA

Similar Products

Part Number MRA4006T3G MRA4007T3G MRA4003T3G MRA4004T3G MRA4005T3G MRA4006T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 800 V 1000 V 300 V 400 V 600 V 800 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 10 µA @ 800 V 10 µA @ 1000 V 10 µA @ 300 V 10 µA @ 400 V 10 µA @ 600 V 10 µA @ 800 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

PMEG3050EP,115
PMEG3050EP,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 5A SOD128
BAT54WS_R1_00001
BAT54WS_R1_00001
Panjit International Inc.
SOD-323, SKY
1N4148W RHG
1N4148W RHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 150MA SOD123
BAS16L-G3-08
BAS16L-G3-08
Vishay General Semiconductor - Diodes Division
SWITCHING DIODE GENPURP DFN1006-
RB751S40T1G
RB751S40T1G
onsemi
DIODE SCHOTTKY 30V 30MA SOD523
MURS140T3G
MURS140T3G
onsemi
DIODE GEN PURP 400V 1A SMB
STPS1H100AF
STPS1H100AF
STMicroelectronics
DIODE SCHOTTKY 100V 1A SMAFLAT
BAS516-TP
BAS516-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD523
BAV21W-HE3-18
BAV21W-HE3-18
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 250MA SOD123
MBRS330T3
MBRS330T3
onsemi
DIODE SCHOTTKY 30V 4A SMC
MRA4007T3
MRA4007T3
onsemi
DIODE GEN PURP 1KV 1A SMA
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL

Related Product By Brand

NRVBD1035VCTLT4G
NRVBD1035VCTLT4G
onsemi
DIODE SCHOTTKY DPAK
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
J113-D74Z
J113-D74Z
onsemi
JFET N-CH 35V 625MW TO92
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
TLV431ALPG
TLV431ALPG
onsemi
IC VREF SHUNT ADJ 1% TO92-3
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK