MRA4003T3
  • Share:

onsemi MRA4003T3

Manufacturer No:
MRA4003T3
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 300V 1A SMA
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MRA4003T3 is a surface mount standard recovery power rectifier produced by onsemi. This component is designed for surface-mounted automotive and other high-reliability applications. It features a compact SMA (Surface Mount Array) package with J-bend leads, making it ideal for automated handling. The rectifier is constructed with glass passivation, ensuring stable and high-temperature operation. The device is also Pb-free, marked with a 'G' or microdot 'G' indicator, and meets the AEC-Q101 qualification standards for automotive use.

Key Specifications

Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 300 Volts
Average Rectified Forward Current (At Rated VR, TL = 150°C) IO 1 Amp
Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TL = 150°C) IFRM 2 Amps
Non-Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 30 Amps
Storage/Operating Case Temperature Tstg, TC −55 to 150 °C
Operating Junction Temperature TJ −55 to 175 °C
Maximum Instantaneous Forward Voltage (IF = 1 A, TJ = 25°C) VF 1.1 Volts
Thermal Resistance, Junction-to-Lead RθJL 16.2 °C/W
Thermal Resistance, Junction-to-Ambient RθJA 88.3 °C/W

Key Features

  • Compact SMA package with J-bend leads, ideal for automated handling.
  • Construction with glass passivation for stable and high-temperature operation.
  • Pb-free, marked with 'G' or microdot 'G' indicator.
  • AEC-Q101 qualified for automotive applications.
  • Molded epoxy case that meets UL 94 V-0 @ 0.125 in.
  • Corrosion-resistant external surfaces and readily solderable terminal leads.
  • Polarity indicated by a band in the plastic body.

Applications

The MRA4003T3 is ideally suited for surface-mounted automotive applications due to its AEC-Q101 qualification and robust thermal characteristics. It can also be used in various industrial applications where high reliability and stable operation under high temperatures are required.

Q & A

  1. What is the peak repetitive reverse voltage of the MRA4003T3?

    The peak repetitive reverse voltage (VRRM) of the MRA4003T3 is 300 volts.

  2. What is the average rectified forward current of the MRA4003T3 at 150°C?

    The average rectified forward current (IO) at 150°C is 1 amp.

  3. What is the maximum operating junction temperature of the MRA4003T3?

    The operating junction temperature (TJ) range is from −55°C to 175°C.

  4. Is the MRA4003T3 Pb-free?
  5. What is the thermal resistance from junction to ambient for the MRA4003T3?
  6. What are the dimensions of the SMA package of the MRA4003T3?
  7. What is the maximum instantaneous forward voltage of the MRA4003T3 at 1 A and 25°C?
  8. Is the MRA4003T3 suitable for high-temperature applications?
  9. What is the non-repetitive peak surge current rating of the MRA4003T3?
  10. What are the storage and operating case temperature ranges for the MRA4003T3?

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):300 V
Current - Average Rectified (Io):1A
Voltage - Forward (Vf) (Max) @ If:1.1 V @ 1 A
Speed:Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:10 µA @ 300 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:DO-214AC, SMA
Supplier Device Package:SMA
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
396

Please send RFQ , we will respond immediately.

Same Series
MRA4004T3G
MRA4004T3G
DIODE GEN PURP 400V 1A SMA
MRA4006T3G
MRA4006T3G
DIODE GEN PURP 800V 1A SMA
MRA4005T1G
MRA4005T1G
DIODE GEN PURP 600V 1A SMA
NRVA4007T3G
NRVA4007T3G
DIODE GEN PURP 1000V 1A SMA
NRVA4006T3G
NRVA4006T3G
DIODE GEN PURP 800V 1A SMA
MRA4005T3G
MRA4005T3G
DIODE GEN PURP 600V 1A SMA
MRA4003T3G
MRA4003T3G
DIODE GEN PURP 300V 1A SMA
NRVA4003T3G
NRVA4003T3G
DIODE GEN PURP 1A 300V SMA
MRA4005T3
MRA4005T3
DIODE GEN PURP 600V 1A SMA
MRA4006T3
MRA4006T3
DIODE GEN PURP 800V 1A SMA
MRA4004T3
MRA4004T3
DIODE GEN PURP 400V 1A SMA
MRA4003T3
MRA4003T3
DIODE GEN PURP 300V 1A SMA

Similar Products

Part Number MRA4003T3 MRA4003T3G MRA4005T3 MRA4006T3 MRA4007T3 MRA4004T3
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Obsolete Active Obsolete Obsolete Obsolete Obsolete
Diode Type Standard Standard Standard Standard Standard Standard
Voltage - DC Reverse (Vr) (Max) 300 V 300 V 600 V 800 V 1000 V 400 V
Current - Average Rectified (Io) 1A 1A 1A 1A 1A 1A
Voltage - Forward (Vf) (Max) @ If 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A 1.1 V @ 1 A
Speed Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io) Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - - - - -
Current - Reverse Leakage @ Vr 10 µA @ 300 V 10 µA @ 300 V 10 µA @ 600 V 10 µA @ 800 V 10 µA @ 1000 V 10 µA @ 400 V
Capacitance @ Vr, F - - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA DO-214AC, SMA
Supplier Device Package SMA SMA SMA SMA SMA SMA
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C -55°C ~ 175°C

Related Product By Categories

1SS400T1G
1SS400T1G
onsemi
DIODE GEN PURP 100V 200MA SOD523
BAT54TS-AU_R1_000A1
BAT54TS-AU_R1_000A1
Panjit International Inc.
SOD-523, SKY
BAW56B5000
BAW56B5000
Infineon Technologies
HIGH SPEED SWITCHING DIODES
MBR10100F_T0_00001
MBR10100F_T0_00001
Panjit International Inc.
10 AMPERES SCHOTTKY BARRIER RECT
1N4007RLG
1N4007RLG
onsemi
DIODE GEN PURP 1000V 1A DO41
STPS5L60SY
STPS5L60SY
STMicroelectronics
DIODE SCHOTTKY 60V 5A SMC
1N4007 BK
1N4007 BK
Central Semiconductor Corp
DIODE GPP 1A 1000V DO41 AXIAL
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
1N4002G R0G
1N4002G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO204AL
MUR160 A0G
MUR160 A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
BAT54/LF1R
BAT54/LF1R
NXP USA Inc.
DIODE SCHOTTKY TO-236AB

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
BD138G
BD138G
onsemi
TRANS PNP 60V 1.5A TO126
MJD44H11G
MJD44H11G
onsemi
TRANS NPN 80V 8A DPAK
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FDS4465-G
FDS4465-G
onsemi
MOSFET P-CH 20V 8SOIC
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN