Overview
The MMBZ12VALT1G is a dual monolithic silicon Zener diode produced by onsemi, designed for applications requiring transient overvoltage protection capability. These devices are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The dual junction common anode design allows for the protection of two separate lines using only one package, making them ideal for situations where board space is limited.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Power Dissipation @ 1.0 ms | 40 | W |
| Total Power Dissipation on FR−5 Board @ TA = 25°C | 225 | mW |
| Thermal Resistance Junction−to−Ambient | 556 | °C/W |
| Working Peak Reverse Voltage (VRWM) | 11.4 | V |
| Breakdown Voltage (VBR) @ IT | 12 | V |
| Maximum Reverse Leakage Current (IR) @ VRWM | 200 | nA |
| Clamping Voltage @ Peak Pulse Current (VC) | 17 | V |
| ESD Rating | Class 3B (> 16 kV) per Human Body Model, Class C (> 400 V) per Machine Model | |
| Package Type | SOT-23 (TO-236) | |
| Package Dimensions | 2.90x1.30x1.00 mm |
Key Features
- SOT-23 package allowing either two separate unidirectional configurations or a single bidirectional configuration.
- Standard Zener breakdown voltage range from 5.6 V to 47 V.
- Peak power of 24 or 40 W @ 1.0 ms (unidirectional).
- ESD rating: Class 3B (> 16 kV) per the Human Body Model and Class C (> 400 V) per the Machine Model.
- Maximum clamping voltage @ peak pulse current.
- Low leakage current < 5.0 µA.
- Flammability rating UL 94V-O.
- Corrosion resistant finish, easily solderable.
- AEC-Q101 qualified and PPAP capable.
Applications
The MMBZ12VALT1G is suitable for various applications requiring transient overvoltage protection, including:
- Voltage and ESD sensitive equipment such as computers, printers, and business machines.
- Communication systems and medical equipment.
- MOSFET gate protection.
- Waveform clipping and voltage regulation.
- General usage in many different end products where board space is limited.
Q & A
- What is the peak power dissipation of the MMBZ12VALT1G?
The peak power dissipation is 40 W @ 1.0 ms (unidirectional).
- What is the working peak reverse voltage (VRWM) of the MMBZ12VALT1G?
The working peak reverse voltage (VRWM) is 11.4 V.
- What is the breakdown voltage (VBR) of the MMBZ12VALT1G?
The breakdown voltage (VBR) is 12 V.
- What is the ESD rating of the MMBZ12VALT1G?
The ESD rating is Class 3B (> 16 kV) per the Human Body Model and Class C (> 400 V) per the Machine Model.
- What package type is used for the MMBZ12VALT1G?
The package type is SOT-23 (TO-236).
- What are the dimensions of the MMBZ12VALT1G package?
The package dimensions are 2.90x1.30x1.00 mm.
- Is the MMBZ12VALT1G AEC-Q101 qualified?
Yes, the MMBZ12VALT1G is AEC-Q101 qualified and PPAP capable.
- What is the maximum reverse leakage current (IR) of the MMBZ12VALT1G?
The maximum reverse leakage current (IR) is 200 nA.
- What is the clamping voltage @ peak pulse current for the MMBZ12VALT1G?
The clamping voltage @ peak pulse current is 17 V.
- What are some common applications for the MMBZ12VALT1G?
Common applications include voltage and ESD sensitive equipment, communication systems, medical equipment, MOSFET gate protection, and waveform clipping.
