Overview
The MMBZ18VALT1G is a dual monolithic silicon Zener diode produced by onsemi. This component is designed for applications requiring transient overvoltage protection capability and is particularly suited for use in voltage and ESD sensitive equipment. Examples of such equipment include computers, printers, business machines, communication systems, and medical devices. The dual junction common anode design of the MMBZ18VALT1G allows it to protect two separate lines using only one package, making it ideal for situations where board space is limited.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Working Peak Reverse Voltage (VRWM) | 18 | V |
| Breakdown Voltage (VBR) | 18 - 20.5 | V |
| Peak Power Dissipation @ 1.0 ms | 24 or 40 | W |
| Maximum Reverse Leakage Current (IR) | < 5.0 | µA |
| ESD Rating | Class N (> 16 kV) per Human Body Model | |
| Package Type | SOT-23 (TO-236) | |
| Maximum Case Temperature for Soldering | 260°C for 10 seconds | |
| Thermal Resistance Junction-to-Ambient | 556 °C/W | |
| AEC-Q101 Qualified and PPAP Capable | Yes |
Key Features
- SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration.
- Standard Zener breakdown voltage range from 5.6 V to 47 V.
- Peak power of 24 or 40 Watts @ 1.0 ms (unidirectional).
- ESD rating of Class N (exceeding 16 kV) per the Human Body Model and IEC61000-4-2 Level 4, ±30 kV contact discharge.
- Low leakage current of less than 5.0 µA.
- Void-free, transfer-molded, thermosetting plastic case with corrosion-resistant finish.
- Designed for optimal automated board assembly and high-density applications.
- Pb-free packages available.
- SZ prefix for automotive and other applications requiring unique site and control change requirements.
Applications
- Voltage regulation and waveform clipping.
- MOSFET gate protection.
- Transient overvoltage protection in computers, printers, business machines, and communication systems.
- ESD protection in medical equipment and other sensitive electronic devices.
- General usage in various end products where board space is limited.
Q & A
- What is the primary function of the MMBZ18VALT1G Zener diode?
The primary function is to provide transient overvoltage protection and ESD protection in electronic circuits.
- What is the breakdown voltage range of the MMBZ18VALT1G?
The breakdown voltage range is between 18 V and 20.5 V.
- What is the peak power dissipation of the MMBZ18VALT1G?
The peak power dissipation is 24 or 40 Watts @ 1.0 ms (unidirectional).
- What is the ESD rating of the MMBZ18VALT1G?
The ESD rating is Class N (exceeding 16 kV) per the Human Body Model and IEC61000-4-2 Level 4, ±30 kV contact discharge.
- What package type is used for the MMBZ18VALT1G?
The package type is SOT-23 (TO-236).
- Is the MMBZ18VALT1G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What are the typical applications of the MMBZ18VALT1G?
Typical applications include voltage regulation, waveform clipping, MOSFET gate protection, and ESD protection in various electronic devices.
- What is the maximum case temperature for soldering the MMBZ18VALT1G?
The maximum case temperature for soldering is 260°C for 10 seconds.
- Is the MMBZ18VALT1G available in Pb-free packages?
Yes, Pb-free packages are available.
- What is the thermal resistance junction-to-ambient of the MMBZ18VALT1G?
The thermal resistance junction-to-ambient is 556 °C/W.
