MMBZ5V6ALT1
  • Share:

onsemi MMBZ5V6ALT1

Manufacturer No:
MMBZ5V6ALT1
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TVS ZENER DUAL 24W CA 5.6V SOT23
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBZ5V6ALT1 is a dual monolithic silicon Zener diode produced by onsemi. It is designed for applications requiring transient overvoltage protection capability, making it ideal for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The device features a dual junction common anode design, allowing it to protect two separate lines using only one package, which is particularly beneficial when board space is limited.

Key Specifications

Parameter Symbol Value Unit
Peak Power Dissipation @ 1.0 ms Ppk 24 W
Total Power Dissipation on FR-5 Board @ TA = 25°C P_D 225 mW
Thermal Resistance Junction-to-Ambient (FR-5 Board) R_JA 556 °C/W
Junction and Storage Temperature Range T_J, T_stg -55 to +150 °C
Lead Solder Temperature (10 Second Duration) T_L 260 °C
Working Peak Reverse Voltage (VRWM) VRWM 5.6 V
Breakdown Voltage @ IT VBR 5.6 to 5.88 V
Maximum Reverse Leakage Current @ VRWM IR 5.0 μA
Clamping Voltage @ Peak Pulse Current VC 8.0 V
ESD Rating (Human Body Model) - Class 3B (> 16 kV) -
ESD Rating (Machine Model) - Class C (> 400 V) -
ESD Rating (IEC61000-4-2 Level 4) - ±30 kV Contact Discharge -

Key Features

  • SOT-23 package allowing either two separate unidirectional configurations or a single bidirectional configuration.
  • Standard Zener breakdown voltage range from 5.6 V to 47 V.
  • Peak power dissipation of 24 W or 40 W @ 1.0 ms (unidirectional).
  • High ESD rating: Class 3B (> 16 kV) per the Human Body Model, Class C (> 400 V) per the Machine Model, and IEC61000-4-2 Level 4, ±30 kV Contact Discharge.
  • Low leakage current of less than 5.0 μA.
  • Pb-free and RoHS compliant.
  • AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

Applications

The MMBZ5V6ALT1 is suitable for use in various voltage and ESD sensitive equipment, including:

  • Computers and peripherals.
  • Printers and business machines.
  • Communication systems.
  • Medical equipment.
  • Microprocessor and I/O protection in computer interfaces.

Q & A

  1. What is the peak power dissipation of the MMBZ5V6ALT1?

    The peak power dissipation of the MMBZ5V6ALT1 is 24 W @ 1.0 ms (unidirectional).

  2. What is the breakdown voltage range of the MMBZ5V6ALT1?

    The breakdown voltage range of the MMBZ5V6ALT1 is from 5.6 V to 5.88 V.

  3. What is the ESD rating of the MMBZ5V6ALT1?

    The ESD rating of the MMBZ5V6ALT1 includes Class 3B (> 16 kV) per the Human Body Model, Class C (> 400 V) per the Machine Model, and IEC61000-4-2 Level 4, ±30 kV Contact Discharge.

  4. What package type does the MMBZ5V6ALT1 use?

    The MMBZ5V6ALT1 uses a SOT-23 package.

  5. Is the MMBZ5V6ALT1 Pb-free and RoHS compliant?

    Yes, the MMBZ5V6ALT1 is Pb-free and RoHS compliant.

  6. What are the typical applications of the MMBZ5V6ALT1?

    The MMBZ5V6ALT1 is typically used in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment.

  7. What is the maximum junction and storage temperature range for the MMBZ5V6ALT1?

    The maximum junction and storage temperature range for the MMBZ5V6ALT1 is -55°C to +150°C.

  8. What is the lead solder temperature for the MMBZ5V6ALT1?

    The lead solder temperature for the MMBZ5V6ALT1 is 260°C for a maximum of 10 seconds.

  9. Is the MMBZ5V6ALT1 AEC-Q101 qualified?

    Yes, the MMBZ5V6ALT1 is AEC-Q101 qualified and PPAP capable for automotive and other applications requiring unique site and control change requirements.

  10. What is the thermal resistance junction-to-ambient for the MMBZ5V6ALT1 on an FR-5 board?

    The thermal resistance junction-to-ambient for the MMBZ5V6ALT1 on an FR-5 board is 556 °C/W).

Product Attributes

Type:- 
Unidirectional Channels:- 
Bidirectional Channels:- 
Voltage - Reverse Standoff (Typ):- 
Voltage - Breakdown (Min):- 
Voltage - Clamping (Max) @ Ipp:- 
Current - Peak Pulse (10/1000µs):- 
Power - Peak Pulse:- 
Power Line Protection:- 
Applications:- 
Capacitance @ Frequency:- 
Operating Temperature:- 
Mounting Type:- 
Package / Case:- 
Supplier Device Package:- 
0 Remaining View Similar

In Stock

-
512

Please send RFQ , we will respond immediately.

Same Series
MMBZ12VALT1G
MMBZ12VALT1G
TVS DIODE 8.5VWM 17VC SOT23-3
SZMMBZ15VALT3G
SZMMBZ15VALT3G
TVS DIODE 12VWM 21VC SOT23-3
MMBZ20VALT1G
MMBZ20VALT1G
TVS DIODE 17VWM 28VC SOT23-3
MMBZ27VALT1G
MMBZ27VALT1G
TVS DIODE 22VWM 40VC SOT23-3
MMBZ15VALT1G
MMBZ15VALT1G
TVS DIODE 12VWM 21VC SOT23-3
SZMMBZ33VALT1G
SZMMBZ33VALT1G
TVS DIODE 26VWM 46VC SOT23-3
SZMMBZ6V8ALT1G
SZMMBZ6V8ALT1G
TVS DIODE 4.5VWM 9.6VC SOT23-3
MMBZ33VALT3G
MMBZ33VALT3G
TVS DIODE 26VWM 46VC
MMBZ47VTALT1G
MMBZ47VTALT1G
TVS DIODE 38VWM 54VC SOT23-3
MMBZ33VALT1
MMBZ33VALT1
TVS ZENER DUAL CA 40W 33V SOT23
MMBZ18VALT1
MMBZ18VALT1
TVS DIODE 14.5VWM 25VC SOT23-3
SZMMBZ4252T1G
SZMMBZ4252T1G
TVS DIODE 22VWM 40VC SOT23-3

Similar Products

Part Number MMBZ5V6ALT1 MMBZ5V6ALT1G MMBZ5V6ALT3
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Active Obsolete
Type - Zener Zener
Unidirectional Channels - 2 2
Bidirectional Channels - 1 1
Voltage - Reverse Standoff (Typ) - 3V 3V
Voltage - Breakdown (Min) - 5.32V 5.32V
Voltage - Clamping (Max) @ Ipp - 8V 8V
Current - Peak Pulse (10/1000µs) - 3A 3A
Power - Peak Pulse - 24W 24W
Power Line Protection - No No
Applications - General Purpose General Purpose
Capacitance @ Frequency - - -
Operating Temperature - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type - Surface Mount Surface Mount
Package / Case - TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package - SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PESD2CANFD27L-UX
PESD2CANFD27L-UX
Nexperia USA Inc.
TVS DIODE 27VWM SC70
PTVS14VP1UP,115
PTVS14VP1UP,115
Nexperia USA Inc.
TVS DIODE 14VWM 23.2VC CFP5
SM6T39A-E3/5B
SM6T39A-E3/5B
Vishay General Semiconductor - Diodes Division
TVS DIODE 33.3VWM 53.9VC DO214AA
PESD1LVDS,115
PESD1LVDS,115
Nexperia USA Inc.
TVS DIODE 5.5VWM DFN2510-10
PESD3V3L4UG,115
PESD3V3L4UG,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 12VC 5TSSOP
PTVS5V0P1UP,115
PTVS5V0P1UP,115
Nexperia USA Inc.
TVS DIODE 5VWM 9.2VC CFP5
SZMMBZ15VDLT1G
SZMMBZ15VDLT1G
onsemi
TVS DIODE 12.8VWM 21.2VC SOT23-3
PESD24VL1BAZ
PESD24VL1BAZ
Nexperia USA Inc.
TVS DIODE 24VWM 70VC SOD323
SM6T150A-M3/52
SM6T150A-M3/52
Vishay General Semiconductor - Diodes Division
TVS DIODE 128VWM 207VC DO214AA
SM15T30CAHE3_A/I
SM15T30CAHE3_A/I
Vishay General Semiconductor - Diodes Division
TVS DIODE 25.6VWM 41.5VC DO214AB
1SMB58AT3G
1SMB58AT3G
Littelfuse Inc.
TVS DIODE 58VWM 93.6VC SMB
SM15T24AHE3_A/H
SM15T24AHE3_A/H
Vishay General Semiconductor - Diodes Division
TVS DIODE 20.5VWM 33.2VC DO214AB

Related Product By Brand

1SMB5927BT3
1SMB5927BT3
onsemi
DIODE ZENER 12V 3W SMB
NTMFS015N15MC
NTMFS015N15MC
onsemi
MOSFET N-CH 150V 9.2A/61A 8PQFN
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC33074APG
MC33074APG
onsemi
IC OPAMP JFET 4 CIRCUIT 14DIP
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN
NCP163AFCT280T2G
NCP163AFCT280T2G
onsemi
IC REG LINEAR 2.8V 250MA 4WLCSP