Overview
The SZESD7410N2T5G is an ultra-low capacitance ESD protection diode manufactured by ON Semiconductor. This component is designed to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events. It features industry-leading capacitance linearity over voltage, making it particularly suitable for RF applications and antenna line protection in wireless handsets and terminals.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Capacitance | < 1.0 pF (Max) | pF |
| Insertion Loss | 0.1 dB at 1 GHz, 0.3 dB at 3 GHz | dB |
| Maximum Reverse Leakage Current | < 1 μA | μA |
| IEC61000-4-2 (ESD) Rating | Level 4 ±30 kV Contact | kV |
| ISO 10605 (ESD) Rating | ±30 kV Contact (330 pF / 2 kΩ) | kV |
| Working Peak Reverse Voltage | 9.5 V | V |
| Breakdown Voltage | 10 V (IT = 1 mA) | V |
| Maximum Peak Pulse Current | 6.4 A (8/20 μs) | A |
| Clamping Voltage | 18.4 - 19.4 V (IPP = 5.0 A, 8/20 μs) | V |
| Junction Capacitance | 0.40 - 0.35 pF (VR = 0 V, f = 1 MHz to 1 GHz) | pF |
| Dynamic Resistance | 1.0 Ω (TLP Pulse) | Ω |
| Operating Temperature Range | -55°C to +150°C | °C |
| Lead Solder Temperature | 260°C (10 seconds) | °C |
Key Features
- Ultra-Low Capacitance: Less than 1.0 pF maximum, ensuring minimal impact on high-frequency signals.
- Industry Leading Capacitance Linearity Over Voltage: Ideal for RF applications where stable capacitance is crucial.
- Low Insertion Loss: 0.1 dB at 1 GHz and 0.3 dB at 3 GHz, minimizing signal attenuation.
- Low Leakage Current: Less than 1 μA, reducing power consumption and heat generation.
- High ESD Protection: Compliant with IEC61000-4-2 Level 4 ±30 kV Contact and ISO 10605 ±30 kV Contact (330 pF / 2 kΩ).
- Automotive and Industrial Compliance: AEC-Q101 qualified and PPAP capable, with a wettable flank package for optimal Automated Optical Inspection (AOI).
- Environmental Compliance: Pb-free, halogen-free/BFR-free, and RoHS compliant.
Applications
- RF Signal ESD Protection: Protects RF signals from ESD events without compromising signal integrity.
- Active Antenna ESD Protection: Safeguards active antennas in wireless devices from ESD and transient voltage events.
- Near Field Communications (NFC): Provides ESD protection for NFC applications, ensuring reliable communication.
Q & A
- What is the primary function of the SZESD7410N2T5G?
The primary function is to protect voltage-sensitive components from electrostatic discharge (ESD) and transient voltage events.
- What is the maximum capacitance of the SZESD7410N2T5G?
The maximum capacitance is less than 1.0 pF.
- What are the insertion loss values at 1 GHz and 3 GHz?
The insertion loss is 0.1 dB at 1 GHz and 0.3 dB at 3 GHz.
- What is the maximum reverse leakage current?
The maximum reverse leakage current is less than 1 μA.
- What ESD standards does the SZESD7410N2T5G comply with?
It complies with IEC61000-4-2 Level 4 ±30 kV Contact and ISO 10605 ±30 kV Contact (330 pF / 2 kΩ).
- Is the SZESD7410N2T5G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the operating temperature range of the SZESD7410N2T5G?
The operating temperature range is -55°C to +150°C.
- What is the lead solder temperature for the SZESD7410N2T5G?
The lead solder temperature is 260°C for a maximum of 10 seconds.
- Is the SZESD7410N2T5G environmentally compliant?
Yes, it is Pb-free, halogen-free/BFR-free, and RoHS compliant.
- What are some typical applications of the SZESD7410N2T5G?
Typical applications include RF signal ESD protection, active antenna ESD protection, and near field communications (NFC).
