Overview
The MMBZ9V1ALT1G is a dual monolithic silicon Zener diode designed by onsemi for applications requiring transient overvoltage protection. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The device features a dual junction common anode design, which protects two separate lines using only one package, making it ideal for situations where board space is limited.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Device Marking | 9A1 | - |
| Working Peak Reverse Voltage (VRWM) | 8.65 - 9.56 | V |
| Breakdown Voltage (VBR) @ IT | 9.1 | V |
| Maximum Reverse Leakage Current (IR) @ VRWM | 0.3 µA | - |
| Peak Power Dissipation @ 1.0 ms | 24 W | - |
| Clamping Voltage @ Peak Pulse Current (VC @ IPP) | 14 V | - |
| ESD Rating | Class 3B (> 16 kV) per Human Body Model, Class C (> 400 V) per Machine Model | - |
| Package Type | SOT-23 (TO-236) | - |
| Thermal Resistance Junction-to-Ambient | 556 °C/W (FR-5 Board), 417 °C/W (Alumina Substrate) | - |
Key Features
- SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration.
- Standard Zener breakdown voltage range from 5.6 V to 47 V.
- Peak power dissipation of 24 or 40 W @ 1.0 ms (unidirectional).
- ESD rating: Class 3B (> 16 kV) per the Human Body Model, Class C (> 400 V) per the Machine Model, and IEC61000-4-2 Level 4, ±30 kV contact discharge.
- Low leakage current < 5.0 µA.
- Flammability rating UL 94V-O.
- Corrosion-resistant finish, easily solderable.
- AEC-Q101 qualified and PPAP capable.
- SZ prefix for automotive and other applications requiring unique site and control change requirements.
Applications
- Voltage regulation and waveform clipping.
- MOSFET gate protection.
- General usage in various electronic devices.
- Protection in computers, printers, business machines, communication systems, and medical equipment.
- Use in applications where board space is limited due to its compact SOT-23 package.
Q & A
- What is the primary function of the MMBZ9V1ALT1G Zener diode?
The primary function is to provide transient overvoltage protection in electronic circuits.
- What is the breakdown voltage range of the MMBZ9V1ALT1G?
The breakdown voltage (VBR) is 9.1 V.
- What is the peak power dissipation of the MMBZ9V1ALT1G?
The peak power dissipation is 24 W @ 1.0 ms (unidirectional).
- What is the ESD rating of the MMBZ9V1ALT1G?
The ESD rating is Class 3B (> 16 kV) per the Human Body Model and Class C (> 400 V) per the Machine Model.
- What package type does the MMBZ9V1ALT1G come in?
The device comes in an SOT-23 (TO-236) package.
- Is the MMBZ9V1ALT1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What are the thermal resistance characteristics of the MMBZ9V1ALT1G?
The thermal resistance junction-to-ambient is 556 °C/W on an FR-5 board and 417 °C/W on an alumina substrate.
- Can the MMBZ9V1ALT1G be used in bidirectional configurations?
Yes, the SOT-23 package allows for either two separate unidirectional configurations or a single bidirectional configuration.
- What is the maximum case temperature for soldering purposes?
The maximum case temperature for soldering purposes is 260 degrees C for 10 seconds.
- Is the MMBZ9V1ALT1G Pb-free?
Yes, Pb-free packages are available.
