Overview
The SZMMBZ27VALT1G is a dual monolithic silicon Zener diode produced by onsemi, designed for applications requiring transient overvoltage protection capability. These diodes are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, and medical equipment. The dual junction common anode design allows for the protection of two separate lines using only one package, making them ideal for situations where board space is limited.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Peak Power Dissipation @ 1.0 ms | 40 | Watts |
| Working Peak Reverse Voltage (VRWM) | 25.65 - 28.35 | Volts |
| Breakdown Voltage (VBR) @ IT | 27 | Volts |
| Maximum Reverse Leakage Current (IR) @ VRWM | 50 nA | nA |
| Clamping Voltage @ Peak Pulse Current (VC) | 40 V @ 1 A | Volts @ Amps |
| ESD Rating | Class 3B (> 16 kV) per Human Body Model, Class C (> 400 V) per Machine Model, IEC61000-4-2 Level 4, ±30 kV Contact Discharge | |
| Package Type | SOT-23 (TO-236) | |
| Maximum Junction Temperature | -55°C to 150°C | °C |
| Thermal Resistance Junction-to-Ambient | 417 °C/W | °C/W |
Key Features
- SOT-23 package allows either two separate unidirectional configurations or a single bidirectional configuration.
- Standard Zener breakdown voltage range from 5.6 V to 47 V.
- Low leakage current of less than 5.0 µA.
- High ESD rating: Class 3B (> 16 kV) per Human Body Model, Class C (> 400 V) per Machine Model, and IEC61000-4-2 Level 4, ±30 kV Contact Discharge.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- Pb-free packages available.
- Corrosion-resistant finish and easily solderable.
- Small package size ideal for high-density applications.
Applications
- Voltage regulation and waveform clipping.
- MOSFET gate protection.
- Transient overvoltage protection in computers, printers, business machines, and communication systems.
- Medical equipment and other ESD-sensitive devices.
- Automotive and industrial applications requiring high reliability and robust ESD protection.
Q & A
- What is the peak power dissipation of the SZMMBZ27VALT1G? The peak power dissipation is 40 Watts @ 1.0 ms.
- What is the working peak reverse voltage range of the SZMMBZ27VALT1G? The working peak reverse voltage range is from 25.65 V to 28.35 V.
- What is the breakdown voltage of the SZMMBZ27VALT1G? The breakdown voltage is 27 V.
- What is the maximum reverse leakage current of the SZMMBZ27VALT1G? The maximum reverse leakage current is 50 nA.
- What is the ESD rating of the SZMMBZ27VALT1G? The ESD rating is Class 3B (> 16 kV) per Human Body Model, Class C (> 400 V) per Machine Model, and IEC61000-4-2 Level 4, ±30 kV Contact Discharge.
- What package type does the SZMMBZ27VALT1G use? The package type is SOT-23 (TO-236).
- What is the maximum junction temperature of the SZMMBZ27VALT1G? The maximum junction temperature is -55°C to 150°C.
- Is the SZMMBZ27VALT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable.
- Are Pb-free packages available for the SZMMBZ27VALT1G? Yes, Pb-free packages are available.
- What are some common applications of the SZMMBZ27VALT1G? Common applications include voltage regulation, MOSFET gate protection, and transient overvoltage protection in various electronic devices.
