Overview
The MJL4281AG is a high-power NPN silicon bipolar transistor produced by onsemi. This transistor is part of the MJL4281A and MJL4302A series, designed for high-power audio applications. It is known for its high collector-emitter sustaining voltage, high current gain, and low harmonic distortion, making it suitable for demanding audio systems.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 350 | Vdc |
| Collector-Base Voltage | VCBO | 350 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 15 | A |
| Base Current - Continuous | IB | 1.5 | A |
| Total Power Dissipation @ TC = 25°C | PD | 230 | W |
| Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 0.54 | °C/W |
| Transition Frequency | fT | 35 | MHz |
| Collector-Emitter Saturation Voltage | VCE(sat) | 1.0 | Vdc |
| Forward Current Transfer Ratio (hFE), MIN | hFE | 80 | |
| Package | TO-264 |
Key Features
- High Collector-Emitter Sustaining Voltage: Up to 350 V, making it suitable for high-power applications.
- High Gain Linearity: DC current gain (hFE) ranges from 80 to 240, ensuring consistent performance across a wide range of collector currents.
- Low Harmonic Distortion: Ideal for high-fidelity audio systems where distortion needs to be minimized.
- High Safe Operating Area (SOA): Supports 1.0 A/100 V for 1 second, ensuring reliable operation under transient conditions.
- High Transition Frequency (fT): Up to 35 MHz, which is beneficial for high-frequency applications.
- Pb-Free Packages: Available in lead-free packaging, complying with environmental regulations.
Applications
- High-Power Audio Systems: Amplifiers, speakers, and other audio equipment requiring high power and low distortion.
- Power Supplies: High-current and high-voltage power supply systems.
- Industrial Control Systems: Motor control, power switching, and other industrial applications.
- Automotive Systems: High-power automotive electronics such as audio systems and power management.
Q & A
- What is the maximum collector-emitter voltage of the MJL4281AG transistor?
The maximum collector-emitter voltage (VCEO) is 350 Vdc.
- What is the continuous collector current rating of the MJL4281AG?
The continuous collector current (IC) is rated at 15 A.
- What is the transition frequency (fT) of the MJL4281AG transistor?
The transition frequency (fT) is up to 35 MHz.
- What is the thermal resistance, junction-to-case (RJC) of the MJL4281AG?
The thermal resistance, junction-to-case (RJC) is 0.54 °C/W).
- Is the MJL4281AG available in Pb-Free packages?
- What is the maximum operating junction temperature of the MJL4281AG?
The maximum operating junction temperature (TJ) is 150 °C).
- What is the collector-emitter saturation voltage (VCE(sat)) of the MJL4281AG?
The collector-emitter saturation voltage (VCE(sat)) is 1.0 Vdc).
- What is the typical application of the MJL4281AG transistor?
The MJL4281AG is typically used in high-power audio systems, power supplies, industrial control systems, and automotive electronics).
- What is the package type of the MJL4281AG transistor?
The MJL4281AG is packaged in a TO-264 package).
- What is the minimum forward current transfer ratio (hFE) of the MJL4281AG?
The minimum forward current transfer ratio (hFE) is 80).
