MJH11022G
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onsemi MJH11022G

Manufacturer No:
MJH11022G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN DARL 250V 15A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MJH11022G is a high-performance Darlington transistor produced by onsemi. This NPN bipolar power transistor is designed for various applications requiring high current and voltage handling capabilities. It is part of the MJH11022 series, which includes complementary PNP transistors. The MJH11022G is known for its high DC current gain, low collector-emitter saturation voltage, and monolithic construction, making it suitable for general-purpose amplifiers, low-frequency switching, and motor control applications.

Key Specifications

ParameterSymbolMin/MaxUnit
Collector-Emitter VoltageVCEO250Vdc
Collector-Base VoltageVCB250Vdc
Emitter-Base VoltageVEB5.0Vdc
Continuous Collector CurrentIC15A
Pulse Collector CurrentIC30A
Base CurrentIB0.5A
Total Device Dissipation @ TC = 25°CPD150W
Thermal Resistance, Junction-to-CaseRJC0.83°C/W
Operating and Storage Junction Temperature RangeTJ, Tstg-65 to +150°C
Collector-Emitter Sustaining VoltageVCEO(sus)250Vdc
Collector-Emitter Saturation Voltage @ IC = 5.0 AVCE(sat)1.2V
Collector-Emitter Saturation Voltage @ IC = 10 AVCE(sat)1.8V

Key Features

  • High DC current gain: hFE = 400 Min
  • Low collector-emitter saturation voltage: VCE(sat) = 1.2 V @ IC = 5.0 A, 1.8 V @ IC = 10 A
  • Monolithic construction
  • Pb-Free device
  • High collector-emitter sustaining voltage: VCEO(sus) = 250 Vdc

Applications

The MJH11022G is designed for use in various applications, including:

  • General-purpose amplifiers
  • Low-frequency switching
  • Motor control applications

Q & A

  1. What is the maximum collector-emitter voltage of the MJH11022G?
    The maximum collector-emitter voltage (VCEO) of the MJH11022G is 250 Vdc.
  2. What is the continuous collector current rating of the MJH11022G?
    The continuous collector current (IC) rating is 15 A.
  3. What is the pulse collector current rating of the MJH11022G?
    The pulse collector current rating is 30 A.
  4. What is the thermal resistance, junction-to-case (RJC) of the MJH11022G?
    The thermal resistance, junction-to-case (RJC) is 0.83 °C/W.
  5. What is the operating and storage junction temperature range of the MJH11022G?
    The operating and storage junction temperature range is -65 to +150 °C.
  6. Is the MJH11022G a Pb-Free device?
    Yes, the MJH11022G is a Pb-Free device.
  7. What are the typical collector-emitter saturation voltages at different collector currents?
    The typical collector-emitter saturation voltage (VCE(sat)) is 1.2 V @ IC = 5.0 A and 1.8 V @ IC = 10 A.
  8. What are the common applications of the MJH11022G?
    The MJH11022G is commonly used in general-purpose amplifiers, low-frequency switching, and motor control applications.
  9. What is the base current rating of the MJH11022G?
    The base current (IB) rating is 0.5 A.
  10. What is the total device dissipation at TC = 25°C for the MJH11022G?
    The total device dissipation at TC = 25°C is 150 W.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):15 A
Voltage - Collector Emitter Breakdown (Max):250 V
Vce Saturation (Max) @ Ib, Ic:4V @ 150mA, 15A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:400 @ 10A, 5V
Power - Max:150 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
Supplier Device Package:TO-247-3
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Similar Products

Part Number MJH11022G MJH11020G MJH11021G MJH11022
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 15 A 15 A 15 A 15 A
Voltage - Collector Emitter Breakdown (Max) 250 V 200 V 250 V 250 V
Vce Saturation (Max) @ Ib, Ic 4V @ 150mA, 15A 4V @ 150mA, 15A 4V @ 150mA, 15A 4V @ 150mA, 15A
Current - Collector Cutoff (Max) 1mA 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 10A, 5V 400 @ 10A, 5V 400 @ 10A, 5V 400 @ 10A, 5V
Power - Max 150 W 150 W 150 W 150 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-218-3
Supplier Device Package TO-247-3 TO-247-3 TO-247-3 SOT-93

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