Overview
The MJ11015G is a high-current Darlington power transistor manufactured by onsemi. This PNP transistor is part of the MJ11015 series and is known for its high DC current gain and monolithic construction with a built-in base-emitter shunt resistor. It is designed for use as an output device in complementary general-purpose amplifier applications. The transistor features a TO-204 (TO-3) package and is lead-free, making it suitable for a variety of high-power electronic systems.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 120 | Vdc |
| Collector-Base Voltage (VCB) | 120 | Vdc |
| Emitter-Base Voltage (VEB) | 5 | Vdc |
| Collector Current (IC) | 30 | A |
| Base Current (IB) | 1 | A |
| Total Device Dissipation (PD) | 200 | W |
| Junction Temperature (TJ) | -55 to +200 | °C |
| Thermal Resistance, Junction-to-Case (RJC) | 0.87 | °C/W |
| Maximum Lead Temperature for Soldering | 275 | °C |
| DC Current Gain (hFE) @ IC = 20 A, VCE = 5 Vdc | 1000 (Min) | |
| Collector-Emitter Saturation Voltage (VCE(sat)) @ IC = 20 A, IB = 200 mA | 3 | Vdc |
| Base-Emitter Saturation Voltage (VBE(sat)) @ IC = 20 A, IB = 200 mA | 3.5 | Vdc |
Key Features
- High DC Current Gain: The MJ11015G has a minimum DC current gain (hFE) of 1000 at IC = 20 A and VCE = 5 Vdc, ensuring high amplification efficiency.
- Monolithic Construction: The transistor features a monolithic construction with a built-in base-emitter shunt resistor, enhancing its reliability and performance.
- High Power Handling: With a total device dissipation of 200 W and a collector current of 30 A, this transistor is suitable for high-power applications.
- Wide Operating Temperature Range: The transistor can operate over a junction temperature range of -55°C to +200°C, making it versatile for various environmental conditions.
- Lead-Free Packaging: The TO-204 (TO-3) package is lead-free, complying with environmental regulations and standards.
Applications
The MJ11015G is designed for use in various high-current and high-power electronic systems, including:
- General-Purpose Amplifiers: Suitable for output stages in complementary amplifier configurations.
- Power Supplies: Can be used in high-current power supply circuits.
- Motor Control: Ideal for motor control applications requiring high current and voltage handling.
- Audio Amplifiers: Used in high-power audio amplifiers for efficient signal amplification.
Q & A
- What is the collector-emitter voltage rating of the MJ11015G transistor?
The collector-emitter voltage (VCEO) rating is 120 Vdc. - What is the maximum collector current of the MJ11015G transistor?
The maximum collector current (IC) is 30 A. - What is the DC current gain (hFE) of the MJ11015G transistor?
The minimum DC current gain (hFE) is 1000 at IC = 20 A and VCE = 5 Vdc. - What is the operating junction temperature range of the MJ11015G transistor?
The operating junction temperature range is -55°C to +200°C. - What type of package does the MJ11015G transistor use?
The transistor uses a TO-204 (TO-3) package. - Is the MJ11015G transistor lead-free?
Yes, the MJ11015G transistor is lead-free. - What are some common applications of the MJ11015G transistor?
Common applications include general-purpose amplifiers, power supplies, motor control, and audio amplifiers. - What is the thermal resistance, junction-to-case (RJC) of the MJ11015G transistor?
The thermal resistance, junction-to-case (RJC) is 0.87 °C/W. - What is the maximum lead temperature for soldering the MJ11015G transistor?
The maximum lead temperature for soldering is 275 °C. - What is the collector-emitter saturation voltage (VCE(sat)) of the MJ11015G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 3 Vdc at IC = 20 A and IB = 200 mA.
