Overview
The MJ11016G is a high-current Darlington power transistor produced by onsemi. This NPN transistor is part of the MJ11012, MJ11015, and MJ11016 series, which are designed for use as output devices in complementary general-purpose amplifier applications. The MJ11016G is housed in a TO-3 package and is lead-free, making it suitable for a wide range of industrial and commercial applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 120 | Vdc |
| Collector-Base Voltage | VCB | 120 | Vdc |
| Emitter-Base Voltage | VEB | 5 | Vdc |
| Collector Current | IC | 30 | Adc |
| Base Current | IB | 1 | Adc |
| Total Device Dissipation @ TC = 25°C | PD | 200 | W |
| Derate above 25°C @ TC = 100°C | PD | 1.15 | W/°C |
| Operating Junction Temperature Range | TJ, Tstg | -55 to +200 | °C |
| Thermal Resistance, Junction-to-Case | RJC | 0.87 | °C/W |
| Maximum Lead Temperature for Soldering Purposes | TL | 275 | °C |
| DC Current Gain (IC = 20 Adc, VCE = 5 Vdc) | hFE | 1000 (Min) | |
| Collector-Emitter Saturation Voltage (IC = 20 Adc, IB = 200 mAdc) | VCE(sat) | 3 | Vdc |
| Base-Emitter Saturation Voltage (IC = 20 A, IB = 200 mAdc) | VBE(sat) | 3.5 | Vdc |
Key Features
- High DC Current Gain: The MJ11016G has a minimum DC current gain (hFE) of 1000 at IC = 20 Adc and VCE = 5 Vdc, ensuring high amplification capabilities.
- Monolithic Construction: The transistor features a monolithic construction with a built-in base-emitter shunt resistor, enhancing its reliability and performance.
- High Collector Current: It can handle a collector current of up to 30 Adc, making it suitable for high-power applications.
- Wide Operating Temperature Range: The transistor operates within a junction temperature range of -55°C to +200°C, allowing it to function in various environmental conditions.
- Lead-Free Package: The TO-3 package is lead-free, complying with environmental regulations and making it suitable for modern electronic designs.
Applications
The MJ11016G is designed for use in a variety of applications, including:
- General-Purpose Amplifiers: It is ideal for output stages in complementary general-purpose amplifier circuits.
- Power Supplies: The high current and voltage ratings make it suitable for power supply applications.
- Motor Control: It can be used in motor control circuits due to its high current handling capability.
- Industrial Automation: The transistor is applicable in various industrial automation systems requiring high-power switching and amplification.
Q & A
- What is the maximum collector current of the MJ11016G?
The maximum collector current of the MJ11016G is 30 Adc.
- What is the collector-emitter voltage rating of the MJ11016G?
The collector-emitter voltage rating of the MJ11016G is 120 Vdc.
- What is the DC current gain of the MJ11016G at IC = 20 Adc and VCE = 5 Vdc?
The DC current gain (hFE) of the MJ11016G at IC = 20 Adc and VCE = 5 Vdc is a minimum of 1000.
- What is the operating junction temperature range of the MJ11016G?
The operating junction temperature range of the MJ11016G is -55°C to +200°C.
- Is the MJ11016G lead-free?
Yes, the MJ11016G is housed in a lead-free TO-3 package.
- What is the thermal resistance, junction-to-case, of the MJ11016G?
The thermal resistance, junction-to-case, of the MJ11016G is 0.87 °C/W.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 275°C for ≤ 10 seconds.
- What are some typical applications of the MJ11016G?
The MJ11016G is typically used in general-purpose amplifiers, power supplies, motor control, and industrial automation systems.
- Does the MJ11016G have a built-in base-emitter shunt resistor?
Yes, the MJ11016G features a monolithic construction with a built-in base-emitter shunt resistor.
- What is the collector-emitter saturation voltage of the MJ11016G at IC = 20 Adc and IB = 200 mAdc?
The collector-emitter saturation voltage (VCE(sat)) of the MJ11016G at IC = 20 Adc and IB = 200 mAdc is 3 Vdc.
