MBR860MFST1G
  • Share:

onsemi MBR860MFST1G

Manufacturer No:
MBR860MFST1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE SCHOTTKY 60V 8A 5DFN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MBR860MFST1G is a SWITCHMODE Power Rectifier produced by onsemi. This Schottky diode is designed for high-efficiency power conversion and switching applications. It features a low forward voltage drop, high surge current capability, and a compact 5DFN package, making it suitable for a variety of power management and rectification needs.

Key Specifications

ParameterValue
Forward Voltage (Vf)650 mV
Forward Surge Current (Ifsm)150 A
Reverse Current (Ir)15 uA
Minimum Operating Temperature-55°C
Maximum Forward Current (If)8 A
Maximum Reverse Voltage (Vr)60 V

Key Features

  • Low forward voltage drop (Vf) of 650 mV for high efficiency
  • High forward surge current (Ifsm) of 150 A for robust performance
  • Compact 5DFN package for space-saving designs
  • Low reverse current (Ir) of 15 uA for minimal leakage
  • Wide operating temperature range from -55°C to 150°C

Applications

The MBR860MFST1G is suitable for various power management and rectification applications, including:

  • Switch-mode power supplies
  • DC-DC converters
  • Power factor correction circuits
  • Motor control and drive systems
  • High-frequency switching circuits

Q & A

  1. What is the forward voltage drop of the MBR860MFST1G?
    The forward voltage drop (Vf) is 650 mV.
  2. What is the maximum forward surge current of the MBR860MFST1G?
    The maximum forward surge current (Ifsm) is 150 A.
  3. What is the reverse current of the MBR860MFST1G?
    The reverse current (Ir) is 15 uA.
  4. What is the minimum operating temperature of the MBR860MFST1G?
    The minimum operating temperature is -55°C.
  5. What is the maximum forward current of the MBR860MFST1G?
    The maximum forward current (If) is 8 A.
  6. What is the maximum reverse voltage of the MBR860MFST1G?
    The maximum reverse voltage (Vr) is 60 V.
  7. In what package is the MBR860MFST1G available?
    The MBR860MFST1G is available in a 5DFN package.
  8. What are some typical applications of the MBR860MFST1G?
    Typical applications include switch-mode power supplies, DC-DC converters, power factor correction circuits, motor control and drive systems, and high-frequency switching circuits.
  9. Where can I find detailed specifications for the MBR860MFST1G?
    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.
  10. What is the significance of the 'SWITCHMODE' designation for the MBR860MFST1G?
    The 'SWITCHMODE' designation indicates that the diode is optimized for high-efficiency power conversion and switching applications.

Product Attributes

Diode Type:Schottky
Voltage - DC Reverse (Vr) (Max):60 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:800 mV @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):- 
Current - Reverse Leakage @ Vr:150 µA @ 60 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN, 5 Leads
Supplier Device Package:5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction:-55°C ~ 175°C
0 Remaining View Similar

In Stock

-
172

Please send RFQ , we will respond immediately.

Same Series
NRVB860MFST3G
NRVB860MFST3G
DIODE SCHOTTKY 60V 8A 5DFN
NRVB860MFST1G
NRVB860MFST1G
DIODE SCHOTTKY 60V 8A 5DFN
MBR860MFST3G
MBR860MFST3G
DIODE SCHOTTKY 60V 8A 5DFN

Similar Products

Part Number MBR860MFST1G MBR860MFST3G MBR830MFST1G
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Obsolete Obsolete
Diode Type Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 60 V 60 V 30 V
Current - Average Rectified (Io) 8A 8A 8A
Voltage - Forward (Vf) (Max) @ If 800 mV @ 8 A 800 mV @ 8 A 700 mV @ 8 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 150 µA @ 60 V 150 µA @ 60 V 200 µA @ 30 V
Capacitance @ Vr, F - - -
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads 8-PowerTDFN, 5 Leads
Supplier Device Package 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL) 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C -40°C ~ 150°C

Related Product By Categories

BAT54-AU_R1_000A1
BAT54-AU_R1_000A1
Panjit International Inc.
SOT-23, SKY
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
B360A-13-F
B360A-13-F
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
STTH1R06A
STTH1R06A
STMicroelectronics
DIODE GEN PURP 600V 1A SMA
1N4148WQ-13-F
1N4148WQ-13-F
Diodes Incorporated
SWITCHING DIODE SOD123 T&R 10K
BAT42WS-7
BAT42WS-7
Diodes Incorporated
DIODE SCHOTTKY 30V 200MA SOD323
MBRS130LT3
MBRS130LT3
onsemi
DIODE SCHOTTKY 30V 1A SMB
NRVBS360BT3G
NRVBS360BT3G
onsemi
DIODE SCHOTTKY 60V 3A SMB
FSV530AF
FSV530AF
onsemi
DIODE SCHOTTKY 30V 5A SMAF
NRVBS3201T3G
NRVBS3201T3G
onsemi
DIODE SCHOTTKY 200V 3A SMC
PMEG3005AEA/ZLX
PMEG3005AEA/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 30V 500MA SC76
MBR120VLSFT1H
MBR120VLSFT1H
onsemi
DIODE SCHOTTKY

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
SMUN5311DW1T3G
SMUN5311DW1T3G
onsemi
TRANS NPN/PNP PREBIAS SOT363
NJW21193G
NJW21193G
onsemi
TRANS PNP 250V 16A TO3P-3L
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
MAX809SQ232T1G
MAX809SQ232T1G
onsemi
IC SUPERVISOR 1 CHANNEL SC70-3
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
UC2842BD
UC2842BD
onsemi
IC REG CTRLR PWM CM 14-SOIC
LM2575D2T-5R4
LM2575D2T-5R4
onsemi
IC REG BUCK 5V 1A D2PAK-5
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK