FQB5N90TM
  • Share:

onsemi FQB5N90TM

Manufacturer No:
FQB5N90TM
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 900V 5.4A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FQB5N90TM is a high-voltage N-Channel MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is part of onsemi's high-voltage MOSFET family and is designed to provide high performance and reliability in various power management applications. The FQB5N90TM is packaged in a D2PAK (TO-263) package, which is suitable for high-power applications due to its good thermal dissipation characteristics.

Key Specifications

ParameterValue
Voltage Rating (Vds)900 V
Continuous Drain Current (Id)5.4 A
On-Resistance (Rds(on)) at Vgs = 10 V2.3 Ω
Gate Threshold Voltage (Vth)2.7 V (min), 4.5 V (max)
Package TypeD2PAK (TO-263)
Power Dissipation (Pd)158 W

Key Features

  • High voltage rating of 900 V, making it suitable for high-voltage applications.
  • Low on-resistance of 2.3 Ω at Vgs = 10 V, which reduces power losses.
  • High continuous drain current of 5.4 A, enabling it to handle substantial current loads.
  • Gate threshold voltage range of 2.7 V to 4.5 V, providing reliable switching characteristics.
  • D2PAK package for good thermal dissipation and high-power handling.
  • ROHS compliant, ensuring environmental sustainability.

Applications

The FQB5N90TM is designed for use in various high-voltage power management applications, including:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • High-voltage switching and power amplifiers.
  • Industrial control and automation systems.
  • Aerospace and automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the FQB5N90TM MOSFET?
    The voltage rating of the FQB5N90TM MOSFET is 900 V.
  2. What is the continuous drain current of the FQB5N90TM?
    The continuous drain current of the FQB5N90TM is 5.4 A.
  3. What is the on-resistance of the FQB5N90TM at Vgs = 10 V?
    The on-resistance of the FQB5N90TM at Vgs = 10 V is 2.3 Ω.
  4. What package type is the FQB5N90TM available in?
    The FQB5N90TM is available in a D2PAK (TO-263) package.
  5. Is the FQB5N90TM ROHS compliant?
    Yes, the FQB5N90TM is ROHS compliant.
  6. What are some typical applications of the FQB5N90TM?
    The FQB5N90TM is typically used in power supplies, DC-DC converters, motor control systems, high-voltage switching, and industrial control systems.
  7. What is the gate threshold voltage range of the FQB5N90TM?
    The gate threshold voltage range of the FQB5N90TM is 2.7 V to 4.5 V.
  8. What is the power dissipation rating of the FQB5N90TM?
    The power dissipation rating of the FQB5N90TM is 158 W.
  9. Where can I find detailed specifications for the FQB5N90TM?
    Detailed specifications for the FQB5N90TM can be found in the datasheet available on onsemi's official website and other electronic component distributors like Mouser and LCSC.
  10. Is the FQB5N90TM suitable for high-power applications?
    Yes, the FQB5N90TM is suitable for high-power applications due to its high voltage rating, high continuous drain current, and good thermal dissipation characteristics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):900 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.3Ohm @ 2.7A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1550 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):3.13W (Ta), 158W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.81
279

Please send RFQ , we will respond immediately.

Similar Products

Part Number FQB5N90TM FQB6N90TM FQB2N90TM FQB3N90TM FQB4N90TM FQB5N20TM FQB5N30TM FQB5N40TM FQB5N50TM FQB5N60TM FQB5N80TM
Manufacturer onsemi Fairchild Semiconductor onsemi onsemi onsemi onsemi onsemi Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V 900 V 900 V 900 V 900 V 200 V 300 V 400 V 500 V 600 V 800 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc) 5.8A (Tc) 2.2A (Tc) 3.6A (Tc) 4.2A (Tc) 4.5A (Tc) 5.4A (Tc) 4.5A (Tc) 4.5A (Tc) 5A (Tc) 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 2.3Ohm @ 2.7A, 10V 1.9Ohm @ 2.9A, 10V 7.2Ohm @ 1.1A, 10V 4.25Ohm @ 1.8A, 10V 3.3Ohm @ 2.1A, 10V 1.2Ohm @ 2.25A, 10V 900mOhm @ 2.7A, 10V 1.6Ohm @ 2.25A, 10V 1.8Ohm @ 2.25A, 10V 2Ohm @ 2.5A, 10V 2.6Ohm @ 2.4A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 52 nC @ 10 V 15 nC @ 10 V 26 nC @ 10 V 30 nC @ 10 V 7.5 nC @ 10 V 13 nC @ 10 V 13 nC @ 10 V 17 nC @ 10 V 20 nC @ 10 V 33 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1550 pF @ 25 V 1880 pF @ 25 V 500 pF @ 25 V 910 pF @ 25 V 1100 pF @ 25 V 270 pF @ 25 V 430 pF @ 25 V 460 pF @ 25 V 610 pF @ 25 V 730 pF @ 25 V 1250 pF @ 25 V
FET Feature - - - - - - - - - - -
Power Dissipation (Max) 3.13W (Ta), 158W (Tc) 3.13W (Ta), 167W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 130W (Tc) 3.13W (Ta), 140W (Tc) 3.13W (Ta), 52W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 70W (Tc) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 120W (Tc) 3.13W (Ta), 140W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263) D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
BSC093N15NS5ATMA1
BSC093N15NS5ATMA1
Infineon Technologies
MOSFET N-CH 150V 87A TDSON
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
IRF740PBF-BE3
IRF740PBF-BE3
Vishay Siliconix
MOSFET N-CH 400V 10A TO220AB
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
NTMFS4C55NT1G
NTMFS4C55NT1G
onsemi
MOSFET N-CH 30V 78A SO8FL
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223

Related Product By Brand

MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
MC100EP195FAR2
MC100EP195FAR2
onsemi
IC DELAY LINE 1024TAP 32-LQFP
NCS36000DRG
NCS36000DRG
onsemi
IC PIR DETECTOR CTLR 14SOIC
MC74AC273DWR2G
MC74AC273DWR2G
onsemi
IC FF D-TYPE SNGL 8BIT 20SOIC
CAT24C02YI-GT3JN
CAT24C02YI-GT3JN
onsemi
IC EEPROM 2KBIT I2C 8TSSOP
NCP1076BBP100G
NCP1076BBP100G
onsemi
IC OFFLINE SWITCH FLYBACK 8DIP
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
NCP1593AMNTWG
NCP1593AMNTWG
onsemi
IC REG BUCK ADJUSTABLE 3A 10DFN
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223