FJPF5027OTU
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onsemi FJPF5027OTU

Manufacturer No:
FJPF5027OTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN 800V 3A TO220F-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FJPF5027OTU is an NPN silicon transistor manufactured by onsemi, formerly known as Fairchild Semiconductor. This transistor is designed for high voltage and high reliability applications, making it suitable for a variety of industrial and commercial uses. It features high speed switching capabilities and a wide Safe Operating Area (SOA), ensuring robust performance under different operating conditions.

Key Specifications

Parameter Value Unit
Collector-Base Voltage (VCBO) 1100 V
Collector-Emitter Voltage (VCEO) 800 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (DC) (IC) 3 A
Collector Current (Pulse) (ICP) 10 A
Base Current (IB) 1.5 A
Collector Dissipation (PC) 40 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -55 to 150 °C
DC Current Gain (hFE) 10 to 40 -
Collector-Emitter Saturation Voltage (VCE(sat)) 2 V
Base-Emitter Saturation Voltage (VBE(sat)) 1.5 V
Current Gain Bandwidth Product (fT) 15 MHz
Turn On Time (tON) 0.5 μs
Storage Time (tSTG) 3 μs
Fall Time (tF) 0.3 μs

Key Features

  • High Voltage and High Reliability: The FJPF5027OTU is designed to handle high voltages and ensures reliable operation in demanding environments.
  • High Speed Switching: This transistor is optimized for high speed switching applications, making it suitable for use in fast switching circuits.
  • Wide Safe Operating Area (SOA): The transistor has a wide SOA, which enhances its ability to handle various operating conditions without compromising performance.
  • Pb-Free Device: The FJPF5027OTU is a lead-free device, making it compliant with environmental regulations.
  • High Current Capability: It can handle a collector current of up to 3 A (DC) and 10 A (pulse), and a base current of up to 1.5 A.

Applications

  • Industrial Control Systems: Suitable for use in industrial control systems that require high reliability and high voltage handling.
  • Power Supplies: Can be used in power supply circuits where high speed switching and high current capability are necessary.
  • Automotive Systems: Applicable in automotive systems that demand robust and reliable transistor performance.
  • Consumer Electronics: Used in various consumer electronic devices that require high voltage and high speed switching transistors.

Q & A

  1. What is the maximum collector-emitter voltage of the FJPF5027OTU?

    The maximum collector-emitter voltage (VCEO) is 800 V.

  2. What is the maximum collector current of the FJPF5027OTU?

    The maximum collector current (IC) is 3 A (DC) and 10 A (pulse).

  3. What is the junction temperature range of the FJPF5027OTU?

    The junction temperature range is from -55°C to 150°C.

  4. What is the current gain bandwidth product (fT) of the FJPF5027OTU?

    The current gain bandwidth product (fT) is 15 MHz.

  5. Is the FJPF5027OTU a Pb-free device?

    Yes, the FJPF5027OTU is a lead-free device.

  6. What is the typical collector-emitter saturation voltage of the FJPF5027OTU?

    The typical collector-emitter saturation voltage (VCE(sat)) is 2 V.

  7. What is the turn-on time of the FJPF5027OTU?

    The turn-on time (tON) is typically 0.5 μs.

  8. What is the storage time of the FJPF5027OTU?

    The storage time (tSTG) is typically 3 μs.

  9. What is the fall time of the FJPF5027OTU?

    The fall time (tF) is typically 0.3 μs.

  10. In what package is the FJPF5027OTU available?

    The FJPF5027OTU is available in the TO-220 Fullpack, 3-lead package.

  11. What are some common applications of the FJPF5027OTU?

    Common applications include industrial control systems, power supplies, automotive systems, and consumer electronics.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):3 A
Voltage - Collector Emitter Breakdown (Max):800 V
Vce Saturation (Max) @ Ib, Ic:2V @ 300mA, 1.5A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:20 @ 200mA, 5V
Power - Max:40 W
Frequency - Transition:15MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3 Full Pack
Supplier Device Package:TO-220F-3
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FJPF5027RYDTU
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FJPF5027TU
FJPF5027TU
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Similar Products

Part Number FJPF5027OTU FJPF5027RTU FJPF5027TU FJP5027OTU FJPF5021OTU
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active
Transistor Type NPN NPN NPN NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A 3 A 3 A 5 A
Voltage - Collector Emitter Breakdown (Max) 800 V 800 V 800 V 800 V 500 V
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A 2V @ 300mA, 1.5A 2V @ 300mA, 1.5A 2V @ 300mA, 1.5A 1V @ 600mA, 3A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA, 5V 15 @ 200mA, 5V 10 @ 200mA, 5V 20 @ 200mA, 5V 20 @ 600mA, 5V
Power - Max 40 W 40 W 40 W 50 W 40 W
Frequency - Transition 15MHz 15MHz 15MHz 15MHz 15MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 TO-220-3 Full Pack
Supplier Device Package TO-220F-3 TO-220F-3 TO-220F-3 TO-220-3 TO-220F-3

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