FFD08S60S-F085
  • Share:

onsemi FFD08S60S-F085

Manufacturer No:
FFD08S60S-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
DIODE GEN PURP 600V 8A TO252
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FFD08S60S-F085 is a high-performance rectifier diode from onsemi, part of their STEALTH™ II series. This component is designed to offer soft recovery characteristics, making it suitable for applications requiring low switching losses and reduced electromagnetic interference (EMI). The diode features a current rating of 8 A and a voltage rating of 600 V, making it a robust solution for various power conversion and rectification needs.

Key Specifications

Parameter Value Unit
Maximum Average Rectified Current 8 A
Maximum Repetitive Peak Reverse Voltage 600 V
Maximum Operating Junction Temperature 150 °C
Reverse Recovery Time (trr) < 30 ns
Packaging Reel
Qualification AEC-Q101

Key Features

  • Soft Recovery Characteristics: The FFD08S60S-F085 features a reverse recovery time (trr) of less than 30 ns, which is half the recovery time of hyperfast rectifiers, reducing switching losses and EMI.
  • High Current and Voltage Ratings: With a maximum average rectified current of 8 A and a maximum repetitive peak reverse voltage of 600 V, this diode is suitable for high-power applications.
  • High Operating Temperature: The diode can operate up to a junction temperature of 150°C, making it reliable in demanding environments.
  • AEC-Q101 Qualified: This component meets the AEC-Q101 standard, ensuring it is suitable for automotive applications.

Applications

  • Automotive Systems: Given its AEC-Q101 qualification, this diode is ideal for use in automotive power systems, including DC-DC converters and power supplies.
  • Power Supplies and Converters: The FFD08S60S-F085 is suitable for use in high-power switching applications such as SMPS (Switch-Mode Power Supplies), DC-DC converters, and rectifier circuits.
  • Industrial Power Systems: Its high current and voltage ratings make it a reliable choice for industrial power systems, including motor drives and power factor correction circuits.

Q & A

  1. What is the maximum average rectified current of the FFD08S60S-F085?

    The maximum average rectified current is 8 A.

  2. What is the maximum repetitive peak reverse voltage of the FFD08S60S-F085?

    The maximum repetitive peak reverse voltage is 600 V.

  3. What is the reverse recovery time (trr) of the FFD08S60S-F085?

    The reverse recovery time (trr) is less than 30 ns.

  4. What is the maximum operating junction temperature of the FFD08S60S-F085?

    The maximum operating junction temperature is 150°C.

  5. Is the FFD08S60S-F085 AEC-Q101 qualified?

    Yes, the FFD08S60S-F085 is AEC-Q101 qualified.

  6. What type of packaging is available for the FFD08S60S-F085?

    The FFD08S60S-F085 is available in reel packaging.

  7. What are some common applications for the FFD08S60S-F085?

    Common applications include automotive systems, power supplies, DC-DC converters, and industrial power systems.

  8. Why is the FFD08S60S-F085 preferred in high-power applications?

    The FFD08S60S-F085 is preferred due to its high current and voltage ratings, as well as its soft recovery characteristics which reduce switching losses and EMI.

  9. Where can I find detailed specifications for the FFD08S60S-F085?

    Detailed specifications can be found in the datasheet available on the onsemi website or through distributors like Mouser Electronics.

  10. Is the FFD08S60S-F085 still in production?

    No, the FFD08S60S-F085 is not in production and is considered obsolete. However, it may still be available from some distributors or through legacy stock.

Product Attributes

Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):600 V
Current - Average Rectified (Io):8A
Voltage - Forward (Vf) (Max) @ If:2.6 V @ 8 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:100 µA @ 600 V
Capacitance @ Vr, F:- 
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-252AA
Operating Temperature - Junction:-65°C ~ 150°C
0 Remaining View Similar

In Stock

$1.11
172

Please send RFQ , we will respond immediately.

Related Product By Categories

BAS316-TP
BAS316-TP
Micro Commercial Co
DIODE GEN PURP 100V 250MA SOD323
BAS20WTHE3-TP
BAS20WTHE3-TP
Micro Commercial Co
DIODE GEN PURP 150V 200MA SOT323
PMEG6010ELRX
PMEG6010ELRX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A CFP3
STPS2H100ZFY
STPS2H100ZFY
STMicroelectronics
DIODE SCHOTTKY 100V 2A SOD123F
FFSD0665B-F085
FFSD0665B-F085
onsemi
650V 6A SIC SBD GEN1.5
1N4937GP-E3/54
1N4937GP-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A DO204AL
STPS8L30B
STPS8L30B
STMicroelectronics
DIODE SCHOTTKY 30V 8A DPAK
MUR240
MUR240
onsemi
DIODE GEN PURP 400V 2A AXIAL
MUR260RL
MUR260RL
onsemi
DIODE GEN PURP 600V 2A AXIAL
1N4001GPHE3/54
1N4001GPHE3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 1A DO204AL
PMEG6010CEJ/ZLX
PMEG6010CEJ/ZLX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 1A SC90
RB751S-40GJTE61
RB751S-40GJTE61
Rohm Semiconductor
DIODE SCHOTTKY SMD

Related Product By Brand

MMSZ5272BT3G
MMSZ5272BT3G
onsemi
DIODE ZENER 110V 500MW SOD123
FDB024N08BL7
FDB024N08BL7
onsemi
MOSFET N-CH 80V 120A TO263-7
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
MC74HC00ANG
MC74HC00ANG
onsemi
IC GATE NAND 4CH 2-INP 14DIP
MC14528BDR2G
MC14528BDR2G
onsemi
IC MULTIVIBRATOR 90NS 16SOIC
MC74HC138ADT
MC74HC138ADT
onsemi
DECODER/DRIVER, HC/UH SERIES
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
NCP177AMX330TCG
NCP177AMX330TCG
onsemi
IC REG LINEAR 3.3V 500MA 4XDFN
NCV551SN50T1G
NCV551SN50T1G
onsemi
IC REG LINEAR 5V 150MA 5TSOP