Overview
The FDN5618P_G is a 60V P-Channel MOSFET produced by onsemi, utilizing their high voltage PowerTrench process. This device is optimized for power management applications and is known for its high performance and fast switching speeds. The MOSFET is designed to operate with a continuous drain current of 1.25 A and a maximum drain-source voltage of 60 V. It is packaged in a SOT-23-3 surface mount configuration, making it suitable for a variety of compact electronic designs.
Key Specifications
| Parameter | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Drain-Source Voltage (VDSS) | - | - | - | -60 | V |
| Gate-Source Voltage (VGSS) | - | - | - | ±20 | V |
| Continuous Drain Current (ID) | Ta = 25°C | - | - | -1.25 | A |
| Pulsed Drain Current (ID) | Ta = 25°C | - | - | -10 | A |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = -10 V | ID = -1.25 A | 0.148 | 0.170 | 0.245 | Ω |
| Static Drain-Source On-Resistance (RDS(on)) @ VGS = -4.5 V | ID = -1.0 A | 0.185 | 0.230 | 0.315 | Ω |
| Gate Threshold Voltage (VGS(th)) | VDS = VGS, ID = -250 μA | -1 | -1.6 | -3 | V |
| Thermal Resistance, Junction-to-Ambient (RθJA) | - | - | - | 250 | °C/W |
| Operating and Storage Junction Temperature Range (TJ, TSTG) | - | -55 | - | 150 | °C |
Key Features
- High voltage PowerTrench process for low RDS(on)
- Fast switching speed
- Continuous drain current of 1.25 A and maximum drain-source voltage of 60 V
- Pb-free and halogen-free
- High performance trench technology for extremely low RDS(on)
- SOT-23-3 surface mount package
Applications
- DC-DC converters
- Load switch
- Power management
Q & A
- What is the maximum drain-source voltage of the FDN5618P_G MOSFET?
The maximum drain-source voltage (VDSS) is -60 V.
- What is the continuous drain current rating of the FDN5618P_G?
The continuous drain current (ID) is -1.25 A.
- What is the typical on-resistance (RDS(on)) at VGS = -10 V?
The typical on-resistance (RDS(on)) at VGS = -10 V is 0.170 Ω.
- What are the operating and storage junction temperature ranges for the FDN5618P_G?
The operating and storage junction temperature ranges are -55°C to 150°C.
- Is the FDN5618P_G Pb-free and halogen-free?
Yes, the FDN5618P_G is Pb-free and halogen-free.
- What are the common applications of the FDN5618P_G MOSFET?
Common applications include DC-DC converters, load switches, and power management.
- What is the thermal resistance, junction-to-ambient (RθJA), for the FDN5618P_G?
The thermal resistance, junction-to-ambient (RθJA), is 250 °C/W.
- What package type is the FDN5618P_G available in?
The FDN5618P_G is available in a SOT-23-3 surface mount package.
- Is the FDN5618P_G still in production?
No, the FDN5618P_G is obsolete and no longer manufactured.
- What is the gate threshold voltage (VGS(th)) for the FDN5618P_G?
The gate threshold voltage (VGS(th)) is between -1 V and -3 V.
