Overview
The FDMS86500L is an N-Channel MOSFET designed by onsemi, optimized for high efficiency and minimal switch node ringing in DC/DC converters. This MOSFET is suitable for use with either synchronous or conventional switching PWM controllers. It features advanced package and silicon technology, low gate charge, low on-resistance (rDS(on)), fast switching speed, and enhanced body diode performance for soft recovery.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (VDS) | 60 | V |
| Gate to Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (ID) at TC = 25°C | 158 | A |
| Continuous Drain Current (ID) at TC = 100°C | 100 | A |
| Maximum On-Resistance (rDS(on)) at VGS = 10 V, ID = 25 A | 2.5 mΩ | mΩ |
| Maximum On-Resistance (rDS(on)) at VGS = 4.5 V, ID = 20 A | 3.7 mΩ | mΩ |
| Power Dissipation at TC = 25°C | 104 W | W |
| Operating and Storage Junction Temperature Range | -55 to +150 | °C |
| Thermal Resistance, Junction to Case (RθJC) | 1.2 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | 50 | °C/W |
| Gate Charge (Qg) | 165 nC | nC |
| Turn-on Delay Time | 27 ns | ns |
| Turn-off Delay Time | 63 ns | ns |
| Rise Time | 28 ns | ns |
| Fall Time | 16 ns | ns |
Key Features
- Advanced Package and Silicon combination for low rDS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- Low gate charge and fast switching speed
- MSL1 robust package design
- 100% UIL tested
- RoHS Compliant
Applications
- Primary Switch in isolated DC-DC converters
- Synchronous Rectifier
- Load Switch
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMS86500L MOSFET?
The maximum drain to source voltage (VDS) is 60 V.
- What are the typical on-resistance values for the FDMS86500L?
The maximum on-resistance (rDS(on)) is 2.5 mΩ at VGS = 10 V, ID = 25 A, and 3.7 mΩ at VGS = 4.5 V, ID = 20 A.
- What is the continuous drain current rating at 25°C case temperature?
The continuous drain current rating at 25°C case temperature is 158 A.
- What is the thermal resistance from junction to case (RθJC) for this MOSFET?
The thermal resistance from junction to case (RθJC) is 1.2 °C/W.
- Is the FDMS86500L RoHS compliant?
- What are the typical turn-on and turn-off delay times for this MOSFET?
The turn-on delay time is 27 ns, and the turn-off delay time is 63 ns.
- What is the gate charge (Qg) for the FDMS86500L?
The gate charge (Qg) is 165 nC.
- What are the common applications of the FDMS86500L MOSFET?
- What is the operating and storage junction temperature range for this MOSFET?
- Is the FDMS86500L available in a surface mount package?
