Overview
The FDMC86116LZ-L701 is an N-Channel logic level MOSFET produced by onsemi, utilizing an advanced Power Trench process. This technology is designed to minimize on-state resistance, making the MOSFET highly efficient for various power management applications. The device is part of onsemi's comprehensive portfolio of energy-efficient solutions, which cater to a wide range of industries including automotive, communications, computing, consumer, industrial, medical, and aerospace/defense sectors.
Key Specifications
| Parameter | Ratings | Unit |
|---|---|---|
| VDS (Drain to Source Voltage) | 100 | V |
| VGS (Gate to Source Voltage) | ±20 | V |
| ID (Drain Current) Continuous at TC = 25°C | 7.5 A | A |
| ID (Drain Current) Continuous at TA | 3.3 A | A |
| PD (Power Dissipation) at TA | 2.3 W | W |
| PD (Power Dissipation) at TC | 19 W | W |
| Package | 8-MLP (3.3x3.3) |
Key Features
- Advanced Power Trench Process: Minimizes on-state resistance, enhancing efficiency and performance.
- Logic Level Operation: Compatible with standard logic level signals, making it easy to integrate into various circuits.
- High Current Capability: Supports continuous drain current of up to 7.5 A at TC = 25°C and 3.3 A at TA.
- Compact Package: 8-MLP (3.3x3.3) surface mount package, ideal for space-constrained designs.
Applications
- Automotive Systems: Suitable for power management in automotive electronics due to its robust and efficient performance.
- Industrial Control: Used in industrial control systems for motor control, power supplies, and other high-current applications.
- Consumer Electronics: Ideal for power management in consumer electronics such as laptops, tablets, and smartphones.
- Medical Devices: Can be used in medical devices requiring reliable and efficient power management.
- Aerospace/Defense: Suitable for use in aerospace and defense applications where high reliability and efficiency are critical.
Q & A
- What is the maximum drain to source voltage (VDS) of the FDMC86116LZ-L701?
The maximum drain to source voltage (VDS) is 100 V.
- What is the maximum gate to source voltage (VGS) of the FDMC86116LZ-L701?
The maximum gate to source voltage (VGS) is ±20 V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is 7.5 A.
- What is the power dissipation (PD) at TA?
The power dissipation (PD) at TA is 2.3 W.
- What is the package type of the FDMC86116LZ-L701?
The package type is 8-MLP (3.3x3.3) surface mount.
- What process is used to manufacture the FDMC86116LZ-L701?
The FDMC86116LZ-L701 is manufactured using an advanced Power Trench process.
- Is the FDMC86116LZ-L701 suitable for automotive applications?
Yes, it is suitable for automotive applications due to its robust and efficient performance.
- Can the FDMC86116LZ-L701 be used in medical devices?
Yes, it can be used in medical devices requiring reliable and efficient power management.
- What are the typical applications of the FDMC86116LZ-L701?
Typical applications include industrial control, consumer electronics, and aerospace/defense systems.
- Where can I find detailed specifications for the FDMC86116LZ-L701?
Detailed specifications can be found in the datasheet available on onsemi's official website and other electronic component distributors like Digi-Key.
