Overview
The FDB075N15A-F085 is an N-Channel Power Trench® MOSFET produced by onsemi. This device is designed using onsemi's advanced POWERTRENCH process, which minimizes on-state resistance while maintaining superior switching performance. Although this device is discontinued and not recommended for new designs, it remains a significant component in existing systems. It is packaged in a D2-PAK (TO-263) and is known for its high power and current handling capabilities.
Key Specifications
| Symbol | Parameter | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| VDSS | Drain to Source Voltage | - | - | 150 | V |
| VGS | Gate to Source Voltage | - | - | ±20 | V |
| ID | Drain Current - Continuous (VGS=10V) | - | - | 110 | A |
| PD | Power Dissipation | - | - | 333 | W |
| TJ, TSTG | Operating and Storage Temperature | -55 | - | 175 | °C |
| RθJC | Thermal Resistance Junction to Case | - | - | 0.45 | °C/W |
| RθJA | Maximum Thermal Resistance Junction to Ambient | - | - | 43 | °C/W |
| rDS(on) | Drain to Source On Resistance | - | 5.5 | 7.5 | mΩ |
| Qg(tot) | Total Gate Charge | - | 80 | 95 | nC |
Key Features
- Typical rDS(on) = 5.5mΩ at VGS = 10V, ID = 80A
- Typical Qg(tot) = 80nC at VGS = 10V, ID = 80A
- UIS (Unclamped Inductive Switching) Capability
- RoHS Compliant
- Qualified to AEC Q101
- High Performance Trench Technology for Extremely Low RDS(on)
- Fast Switching and Low Gate Charge
Applications
- Automotive Engine Control
- Powertrain Management
- Solenoid and Motor Drivers
- Integrated Starter/Alternator
- Primary Switch for 12V Systems
- Synchronous Rectification for ATX / Server / Telecom PSU
- Battery Protection Circuit
- Motor Drives and Uninterruptible Power Supplies
- Micro Solar Inverter
Q & A
- What is the maximum drain to source voltage (VDSS) of the FDB075N15A-F085 MOSFET?
The maximum drain to source voltage (VDSS) is 150V.
- What is the maximum continuous drain current (ID) of the FDB075N15A-F085 MOSFET?
The maximum continuous drain current (ID) is 110A at VGS = 10V.
- What is the typical on-state resistance (rDS(on)) of the FDB075N15A-F085 MOSFET?
The typical on-state resistance (rDS(on)) is 5.5mΩ at VGS = 10V, ID = 80A.
- What is the maximum gate to source voltage (VGS) of the FDB075N15A-F085 MOSFET?
The maximum gate to source voltage (VGS) is ±20V.
- Is the FDB075N15A-F085 MOSFET RoHS compliant?
Yes, the FDB075N15A-F085 MOSFET is RoHS compliant.
- What are the typical applications of the FDB075N15A-F085 MOSFET?
The typical applications include automotive engine control, powertrain management, solenoid and motor drivers, integrated starter/alternator, and primary switch for 12V systems.
- What is the thermal resistance junction to case (RθJC) of the FDB075N15A-F085 MOSFET?
The thermal resistance junction to case (RθJC) is 0.45°C/W.
- What is the maximum thermal resistance junction to ambient (RθJA) of the FDB075N15A-F085 MOSFET?
The maximum thermal resistance junction to ambient (RθJA) is 43°C/W.
- Is the FDB075N15A-F085 MOSFET qualified to AEC Q101 standards?
Yes, the FDB075N15A-F085 MOSFET is qualified to AEC Q101 standards.
- What is the package type of the FDB075N15A-F085 MOSFET?
The package type is D2-PAK (TO-263).
- Is the FDB075N15A-F085 MOSFET still in production?
No, the FDB075N15A-F085 MOSFET is discontinued and not recommended for new designs.[
